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IRF7402PBF Fiches technique(PDF) 1 Page - International Rectifier |
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IRF7402PBF Fiches technique(HTML) 1 Page - International Rectifier |
1 / 8 page HEXFET® Power MOSFET 9/30/04 IRF7402PbF Description Parameter Max. Units RθJA Maximum Junction-to-Ambient 50 °C/W Thermal Resistance Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching Lead-Free Top View 8 1 2 3 4 5 6 7 D D D D G S A S S A VDSS = 20V RDS(on) = 0.035Ω Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characterstics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared or wave soldering techniques. Power dissipation of greater than 0.8 W is possible in a typical PCB mount application. www.irf.com 1 SO-8 Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 6.8 ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 5.4 A IDM Pulsed Drain Current 54 PD @TA = 25°C Power Dissipation 2.5 W PD @TA = 70°C Power Dissipation 1.6 Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 12 V dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C Absolute Maximum Ratings PD - 95202 |
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