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STI57N65M5 Fiches technique(PDF) 5 Page - STMicroelectronics |
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STI57N65M5 Fiches technique(HTML) 5 Page - STMicroelectronics |
5 / 22 page STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5 Electrical characteristics Doc ID 022849 Rev 4 5/22 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(V) tr(V) tf(i) tc(off) Voltage delay time Voltage rise time Current fall time Crossing time VDD = 400 V, ID = 28 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19) - 73 15 12 19 - ns ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) - 42 168 A A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 42 A, VGS = 0 - 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 42 A, di/dt = 100 A/µs VDD = 100 V (see Figure 19) - 418 8 40 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 42 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 19) - 528 12 44 ns µC A |
Numéro de pièce similaire - STI57N65M5 |
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Description similaire - STI57N65M5 |
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