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TA329Q Fiches technique(PDF) 9 Page - Dynex Semiconductor

No de pièce TA329Q
Description  Asymmetric Thyristor
Download  10 Pages
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Fabricant  DYNEX [Dynex Semiconductor]
Site Internet  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

TA329Q Fiches technique(HTML) 9 Page - Dynex Semiconductor

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TA329..Q
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PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
6.3
Cathode tab
Gate
Ø1.5
Ø19nom
2 holes 3.6 x 2.0 deep
(in both electrodes)
Cathode
Anode
Ø19nom
Ø 42 max
Ø 38 max
Nominal weight: 50g
Clamping force: 3.5kN
±10%
Lead length: 250mm
Package outine type code: MU86
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Calculating the junction temperature or power semiconductors
AN4506
Gate triggering and the use of gate characteristics
AN4840
Recommendations for clamping power semiconductors
AN4839
The effect of temperature on thyristor performance
AN4870
Thyristor and diode measurement with a multi-meter
AN4853
Turn-on performance of thyristors in parallel
AN4999
Use of V
TO
, r
T
on-state characteristic
AN5001


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