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SI1023CX Fiches technique(PDF) 4 Page - Vishay Siliconix |
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SI1023CX Fiches technique(HTML) 4 Page - Vishay Siliconix |
4 / 8 page www.vishay.com 4 Document Number: 63303 S11-1384-Rev. A, 11-Jul-11 Vishay Siliconix Si1023CX This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Gate Charge Source-Drain Diode Forward Voltage Threshold Voltage 0 2 4 6 8 0 0.45 0.9 1.35 1.8 Q g - Total Gate Charge (nC) V DS = 16 V V DS = 10 V I D = 0.4 A V DS = 5 V 0.1 1 10 0.0 0.3 0.6 0.9 1.2 1.5 V SD - Source-to-Drain Voltage (V) T J = 25 °C T J = 150 °C 0.3 0.4 0.5 0.6 0.7 - 50 - 25 0 25 50 75 100 125 150 T J -Temperature (°C) ID = 250 μA On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.7 0.9 1.1 1.3 1.5 - 50 - 25 0 25 50 75 100 125 150 T J - Junction Temperature (°C) I D = 0.35 A V GS = 4.5 V V GS = 2.5 V 0.4 0.6 0.8 1.0 1.2 12345678 V GS - Gate-to-Source Voltage (V) T J = 125 °C I D = 0.35 A T J = 25 °C 0 0.45 0.9 1.35 1.8 2.25 2.7 0.01 0.1 1 10 100 Time (s) |
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