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BC856AW Fiches technique(PDF) 2 Page - Diodes Incorporated |
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BC856AW Fiches technique(HTML) 2 Page - Diodes Incorporated |
2 / 2 page DS30251 Rev. A-2 2 of 2 BC856AW - BC858CW Electrical Characteristics Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage (Note 3) BC856 BC857 BC858 V(BR)CBO -80 -50 -30 — — — — — — V IC = 10 mA, IB = 0 Collector-Emitter Breakdown Voltage (Note 3) BC856 BC857 BC858 V(BR)CEO -65 -45 -30 — — — — — — V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage (Note 3) V(BR)EBO -5 — — V IE = 1 mA, IC = 0 DC Current Gain (Note 3) Current Gain Group A B C hFE 125 220 420 180 290 520 250 475 800 — VCE = -5.0V, IC = -2.0mA Collector-Emitter Saturation Voltage (Note 3) VCE(SAT) — -75 -250 -300 -650 mV IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA Base-Emitter Saturation Voltage (Note 3) VBE(SAT) — — -700 -850 — -950 mV IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA Base-Emitter Voltage (Note 3) VBE(ON) -600 — -650 — -750 -820 mV VCE = -5.0V, IC = -2.0mA VCE = -5.0V, IC = -10mA Collector-Cutoff Current (Note 3) ICBO ICBO — — — — -15 -4.0 nA µA VCB = -30V VCB = -30V, TA = 150°C Gain Bandwidth Product fT 100 200 — MHz VCE = -5.0V, IC = -10mA, f = 100MHz Collector-Base Capacitance CCBO —3 4.5 pF VCB = -10V, f = 1.0MHz Noise Figure NF — — 10 dB VCE = -5.0V, IC = 200µA, RS = 2k W, f = 1kHz, Df = 200Hz Notes: 3. Short duration pulse test to minimize self-heating effect. @ TA =25°C unless otherwise specified XXX = Product Type Marking Code (See Page 1), e.g. K3A = BC856AW YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September XXX Marking Information Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. *xx = device type, e.g. BC856AW-7. Device Packaging Shipping BC85xxW-7* SOT-323 3000/Tape & Reel Ordering Information (Note 4) Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 12 3 4 5 6 7 89 O N D Year 1998 1999 2000 2001 2002 2003 2004 Code JK LM N PR Date Code Key |
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