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CAS300M12BM2 Fiches technique(PDF) 7 Page - Cree, Inc

No de pièce CAS300M12BM2
Description  1.2kV, 5.0 m廓 All-Silicon Carbide Half-Bridge Module
Download  8 Pages
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Fabricant  CREE [Cree, Inc]
Site Internet  http://www.cree.com/
Logo CREE - Cree, Inc

CAS300M12BM2 Fiches technique(HTML) 7 Page - Cree, Inc

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7
Typical Performance
Fig 25. Typical Clamped Inductive Switching
Energy vs Drain Current (VDD = 600V)
Fig 26. Typical Clamped Inductive Switching
Energy vs Drain Current (VDD = 800V)
Fig 27. Typical Switching Loss vs. Temperature
Fig 28. Typical Switching Loss vs. Gate Resistance
0
2
4
6
8
10
12
14
16
18
20
0
50
100
150
200
250
300
350
400
450
Drain to Source Current, IDS (A)
EOff
EOn
ETotal
Conditions:
TJ = 25 °C
VDD = 600 V
RG(ext) = 2.5 Ω
VGS = -5/+20 V
L = 77 μH
0
5
10
15
20
25
30
0
50
100
150
200
250
300
350
400
450
Drain to Source Current, IDS (A)
EOff
EOn
ETotal
Conditions:
TJ = 25 °C
VDD = 800 V
RG(ext) = 2.5 Ω
VGS = -5/+20 V
L = 77 μH
0
2
4
6
8
10
12
14
0
25
50
75
100
125
150
175
Junction Temperature, TJ (°C)
EOff
EOn
ETotal
Conditions:
VDD = 600 V
RG(ext) = 2.5 Ω
IDS =300 A
VGS = -5/+20 V
L = 77 μH
0
20
40
60
80
100
120
0
5
10
15
20
25
30
35
40
45
External Gate Resistor RG(ext) (Ohms)
EOff
EOn
ETotal
Conditions:
TJ = 25 °C
VDD = 600 V
IDS =300 A
VGS = -5/+20 V
L = 77 μH


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