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CAS300M12BM2 Fiches technique(PDF) 7 Page - Cree, Inc |
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CAS300M12BM2 Fiches technique(HTML) 7 Page - Cree, Inc |
7 / 8 page 7 Typical Performance Fig 25. Typical Clamped Inductive Switching Energy vs Drain Current (VDD = 600V) Fig 26. Typical Clamped Inductive Switching Energy vs Drain Current (VDD = 800V) Fig 27. Typical Switching Loss vs. Temperature Fig 28. Typical Switching Loss vs. Gate Resistance 0 2 4 6 8 10 12 14 16 18 20 0 50 100 150 200 250 300 350 400 450 Drain to Source Current, IDS (A) EOff EOn ETotal Conditions: TJ = 25 °C VDD = 600 V RG(ext) = 2.5 Ω VGS = -5/+20 V L = 77 μH 0 5 10 15 20 25 30 0 50 100 150 200 250 300 350 400 450 Drain to Source Current, IDS (A) EOff EOn ETotal Conditions: TJ = 25 °C VDD = 800 V RG(ext) = 2.5 Ω VGS = -5/+20 V L = 77 μH 0 2 4 6 8 10 12 14 0 25 50 75 100 125 150 175 Junction Temperature, TJ (°C) EOff EOn ETotal Conditions: VDD = 600 V RG(ext) = 2.5 Ω IDS =300 A VGS = -5/+20 V L = 77 μH 0 20 40 60 80 100 120 0 5 10 15 20 25 30 35 40 45 External Gate Resistor RG(ext) (Ohms) EOff EOn ETotal Conditions: TJ = 25 °C VDD = 600 V IDS =300 A VGS = -5/+20 V L = 77 μH |
Numéro de pièce similaire - CAS300M12BM2 |
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Description similaire - CAS300M12BM2 |
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