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TYN612 Fiches technique(PDF) 4 Page - STMicroelectronics |
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TYN612 Fiches technique(HTML) 4 Page - STMicroelectronics |
4 / 13 page Characteristics TN1215, TS1220, TYN612, TYN812, TYN1012 4/13 Doc ID 7475 Rev 7 Figure 3. Average and D.C. on-state current versus ambient temperature (DPAK) Figure 4. Relative variation of thermal impedance junction to case versus pulse duration 0 25 50 75 100 125 0.0 0.5 1.0 1.5 2.0 2.5 3.0 I (A) T(AV) T (°C) amb α = 180° D.C. DPAK 2 DPAK Device mounted on FR4 with recommended pad layout 1E-3 1E-2 1E-1 1E+0 0.1 0.2 0.5 1.0 K=[Z /R th(j-c) th(j-c)] t (s) p Figure 5. Relative variation of thermal impedance junction to ambient versus pulse duration (DPAK) Figure 6. Relative variation of gate trigger and holding current versus junction temperature for TS1220 series 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 0.01 0.10 1.00 K=[Z /R th(j-a) th(j-a)] t (s) p DPAK TO-220AB / IPAK DPAK 2 Device mounted on FR4 with recommended pad layout -40 -20 0 20 40 60 80 100 120 140 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 T (°C) j I,I ,I [T ] / GTHL j I ,I ,I [T =25°C] GT H L j IGT IH & I R = 1k L GK Ω Figure 7. Relative variation of gate trigger and holding current versus junction temperature Figure 8. Relative variation of holding current versus gate-cathode resistance (typical values) -40 -20 0 20 40 60 80 100 120 140 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 I,I ,I [T ] / GTHL j I ,I ,I [T =25°C] GTHL j T (°C) j IGT IH & IL TN1215 and TYNx12 Series 1E-2 1E-1 1E+0 1E+1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 R(k ) GK Ω I [R ] / I [ =1k ] HGK H Ω RGK Tj = 25°C TS1220 Series |
Numéro de pièce similaire - TYN612 |
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Description similaire - TYN612 |
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