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KSB1151YSTU Fiches technique(PDF) 1 Page - Fairchild Semiconductor |
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KSB1151YSTU Fiches technique(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page ©2003 Fairchild Semiconductor Corporation Rev. B, May 2003 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted * PW ≤10ms, Duty Cycle≤50% Electrical Characteristics T C=25°C unless otherwise noted * Pulse test: PW ≤350µs, Duty Cycle≤2% Pulsed hFE Classification Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V VCEO Collector-Emitter Voltage - 60 V VEBO Emitter-Base Voltage - 7 V IC Collector Current (DC) - 5 A ICP *Collector Current (Pulse) - 8 A IB Base Current - 1 A PC Collector Dissipation (Ta=25°C) 1.3 W Collector Dissipation (TC=25°C) 20 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB = - 50V, IE = 0 - 10 µA IEBO Emitter Cut-off Current VEB = - 7V, IC = 0 - 10 µA hFE1 hFE2 hFE3 * DC Current Gain VCE = - 1V, IC = - 0.1A VCE = - 1V, IC = - 2A VCE = - 2V, IC = - 5A 60 100 50 200 400 VCE(sat) * Collector-Emitter Saturation Voltage IC = - 2A, IB = - 0.2A - 0.14 - 0.3 V VBE(sat) * Base-Emitter Saturation Voltage IC = - 2A, IB = - 0.2A - 0.9 - 1.2 V tON Turn On Time VCC = - 10V, IC = - 2A IB1 = - IB2 =0.2A RL = 5 Ω 0.15 1 µs tSTG Storage Time 0.78 2.5 µs tF Fall Time 0.18 1 µs Classification O Y G hFE2 100 ~ 200 160 ~ 320 200 ~ 400 KSB1151 Feature • Low Collector-Emitter Saturation Voltage • Large Collector Current • High Power Dissipation : PC=1.3W (Ta=25°C) • Complement to KSD 1691 1 TO-126 1. Emitter 2.Collector 3.Base |
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