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BTB04AG-9-SW-TM3-T Fiches technique(PDF) 2 Page - Unisonic Technologies |
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BTB04AG-9-SW-TM3-T Fiches technique(HTML) 2 Page - Unisonic Technologies |
2 / 3 page BTB04A Preliminary TRIACS UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R401-055.a ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT RMS On-State Current (360° Conduction Angle) TC=90°C IT(RMS) 4 A Non Repetitive Surge Peak On-State Current (TJ initial=25°C) tp=8.3ms ITSM 42 A tp=10ms 40 A I 2t Value tp=10ms I 2t 8 A 2s Critical Rate of Rise of On-State Current: IG=50mA, dIG/dt=0.1A/µs Repetitive F=50Hz dI/dt 10 A/µs Non Repetitive 50 A/µs Repetitive Peak Off-State Voltage (TJ=110°C) 400 T/D VDRM/VRRM 400 V 600 T/S 600 V Peak Gate Current tp=20µs IGM 4 A Peak Positive Gate Voltage tp=20µs VGM 16 V Peak Positive Gate Power Dissipation tp=20µs PGM) 40 W Average Gate Power Dissipation PG(AV) 1 W Operating Junction Temperature TJ -40~+110 °C Storage Junction Temperature TSTG -40~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL RESISTANCES PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 60 °C/W Junction to Case for 360° Conduction Angle (F=50Hz) (AC) θJC 2.4 °C/W Junction to Case (DC) 3.2 °C/W ELECTRICAL CHARACTERISTICS FOR LOGIC LEVEL (3 QUADRANTS) PARAMETER SYMBOL TEST CONDITIONS SW UNIT MIN TYP MAX Gate Trigger Current IGT VD=12V (DC) RL=33Ω TJ=25°C I-II-III 10 mA Gate Trigger Voltage VGT I-II-III 1.5 V Gate Non-Trigger Voltage VGD VD=VDRM, RL=3.3kΩ, TJ=110°C I-II-III 0.2 V Time Gate Trigger tGT VD=VDRM, IG=40mA, dIG/dt=0.5A/µs, TJ=25°C I-II-III 2 µs Holding Current (Note 1) IH IT=100mA, Gate Open, TJ=25°C 25 mA Latching Current IL IG=1.2IGT, TJ=25°C I-III 20 mA II 40 mA Peak On-State Voltage (Note 1) VTM ITM=5.5A, tp=380μs, TJ=25°C 1.65 V Repetitive Peak Off-State Current IDRM VDRM Rated, TJ=25°C 0.01 mA IRRM VRRM Rated, TJ=110°C 0.75 mA Critical Rate of Rise of Off-State Voltage (Note 1) dV/dt Linear Slope up to VD=67%VDRM, Gate Open, TJ=110°C 10 V/µs Critical Rate of Rise of Off-State Voltage at Commutation (Note 1) (dV/dt)c (dI/dt)c=1.8A/ms, TJ=110°C 5 V/µs Note: 1. For either polarity of electrode MT2 voltage with reference to electrode MT1. |
Numéro de pièce similaire - BTB04AG-9-SW-TM3-T |
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Description similaire - BTB04AG-9-SW-TM3-T |
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