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UF5210L-TA3-T Fiches technique(PDF) 2 Page - Unisonic Technologies |
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UF5210L-TA3-T Fiches technique(HTML) 2 Page - Unisonic Technologies |
2 / 6 page UF5210 POWER MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-845.B ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -100 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous VGS=-10V, TC=25°C ID -40 A VGS=-10V, TC=100°C -29 A Pulsed (Note 2) IDM -140 A Avalanche Current (Note 2) IAR -21 A Avalanche Energy Single Pulse (Note 3) EAS 780 mJ Repetitive (Note 2) EAR 20 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt -5.0 V/ns Power Dissipation (TC=25°C) PD 200 W Linear Derating Factor 1.3 W/°C Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive rating; pulse width limited by max. junction temperature. 3. VDD=-25V, Starting TJ=25°C, L=3.5mH, RG=25Ω, IAS=-21A. 4. ISD≤-21A, di/dt≤-480A/µs, VDD≤BVDSS, TJ≤150°C THERMAL RESISTANCE PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62 °C/W Junction to Case θJC 0.75 °C/W |
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