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BUK6218-40C Fiches technique(PDF) 5 Page - NXP Semiconductors |
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BUK6218-40C Fiches technique(HTML) 5 Page - NXP Semiconductors |
5 / 14 page BUK6218-40C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 — 4 October 2010 5 of 14 NXP Semiconductors BUK6218-40C N-channel TrenchMOS intermediate level FET 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure 4 --2.52 K/W Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration 003aae858 10 -2 10 -1 1 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 1 tp (s) tp T P t tp T δ = δ = 0.5 0.2 0.1 0.05 0.02 single shot Zth(j-mb) (K/W) |
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