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IRF150 Fiches technique(PDF) 2 Page - Nell Semiconductor Co., Ltd |
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IRF150 Fiches technique(HTML) 2 Page - Nell Semiconductor Co., Ltd |
2 / 7 page SEMICONDUCTOR RoHS RoHS Nell High Power Products UNIT MIN. 0.95 0.24 THERMAL RESISTANCE PARAMETER Thermal resistance, case to heat sink Thermal resistance, junction to case SYMBOL Rth(j-c) Rth(c-s) TYP. MAX. ºC/W 40 Thermal resistance, junction to ambient Rth(j-a) UNIT V ns μA pF nC 40 MAX. 250 100 -100 100 0.11 1900 230 11 56 45 450 ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) C I = 250μA, D V = 0V GS TEST CONDITIONS I = 1mA, D V =V DS GS V =100V, V =0V DS GS T = 25°C C Fall time Gate to source reverse leakage current Input capacitance Total gate charge Output capacitance PARAMETER Rise time Gate to source forward leakage current Turn-on delay time Reverse transfer capacitance Breakdown voltage temperature coefficient Drain to source breakdown voltage Turn-off delay time SYMBOL CISS ▲ ▲ V / (BR)DSS TJ V(BR)DSS IGSS QG tr tf QGS 13 Gate to source charge Drain to source leakage current IDSS COSS CRSS td(ON) td(OFF) V/ºC Ω nA T =125°C C TYP. MIN. 25.0 110 V = 50V, DD (Note1,2) V = 10V GS I = 22A, R = 3.6Ω, R = 2.9Ω D G D V = 25V, V = 0V, f =1MHz DS GS V = -20V, V = 0V GS DS V = 20V, V = 0V GS DS Forward transconductance gfs V = 25V, l = 25A DS D V =80V, V =0V DS GS S STATIC DYNAMIC 15 V = 80V, DD (Note1,2) V = 10V GS I = 22A, D 0.055 Static drain to source on-state resistance RDS(ON) I = 25A, V = 10V D GS 2.0 V 4.0 V =V , I =250μA GS DS D Gate threshold voltage VGS(TH) Gate to drain charge (Miller charge) QGD 5 SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise specified) C SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT VSD Diode forward voltage I = 42A, V = 0V SD GS 2.5 V Is (IsD) Continuous source to drain current Integral reverse P-N junction diode in the MOSFET 42 D (Drain) G (Gate) S (Source) A ISM Pulsed source current 160 trr Reverse recovery time 330 ns I = 42A, V = 0V, SD GS dI /dt = 100A/µs F Qrr Reverse recovery charge 1.9 μC Note: 1. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%. 2. Essentially independent of operating temperature. www.nellsemi.com Page 2 of 7 IRF150 Series 13 220 2.9 58 nH Internal drain inductance LD LS Internal source inductance Between lead, 6mm(0.25”) form package and center of die contact |
Numéro de pièce similaire - IRF150 |
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Description similaire - IRF150 |
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