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IRF150 Fiches technique(PDF) 2 Page - Nell Semiconductor Co., Ltd

No de pièce IRF150
Description  N-Channel Power MOSFET
Download  7 Pages
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Fabricant  NELLSEMI [Nell Semiconductor Co., Ltd]
Site Internet  http://www.nellsemi.com
Logo NELLSEMI - Nell Semiconductor Co., Ltd

IRF150 Fiches technique(HTML) 2 Page - Nell Semiconductor Co., Ltd

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SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
UNIT
MIN.
0.95
0.24
THERMAL RESISTANCE
PARAMETER
Thermal resistance, case to heat sink
Thermal resistance, junction to case
SYMBOL
Rth(j-c)
Rth(c-s)
TYP.
MAX.
ºC/W
40
Thermal resistance, junction to ambient
Rth(j-a)
UNIT
V
ns
μA
pF
nC
40
MAX.
250
100
-100
100
0.11
1900
230
11
56
45
450
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
C
I = 250μA,
D
V
= 0V
GS
TEST CONDITIONS
I = 1mA,
D
V
=V
DS
GS
V
=100V, V
=0V
DS
GS
T = 25°C
C
Fall time
Gate to source reverse leakage current
Input capacitance
Total gate charge
Output capacitance
PARAMETER
Rise time
Gate to source forward leakage current
Turn-on delay time
Reverse transfer capacitance
Breakdown voltage temperature coefficient
Drain to source breakdown voltage
Turn-off delay time
SYMBOL
CISS
V
/
(BR)DSS
TJ
V(BR)DSS
IGSS
QG
tr
tf
QGS
13
Gate to source charge
Drain to source leakage current
IDSS
COSS
CRSS
td(ON)
td(OFF)
V/ºC
Ω
nA
T =125°C
C
TYP.
MIN.
25.0
110
V
= 50V,
DD
(Note1,2)
V
= 10V
GS
I = 22A, R = 3.6Ω, R = 2.9Ω
D
G
D
V
= 25V, V
= 0V, f =1MHz
DS
GS
V
= -20V, V
= 0V
GS
DS
V
= 20V, V
= 0V
GS
DS
Forward transconductance
gfs
V
= 25V, l = 25A
DS
D
V
=80V, V
=0V
DS
GS
S
STATIC
DYNAMIC
15
V
= 80V,
DD
(Note1,2)
V
= 10V
GS
I = 22A,
D
0.055
Static drain to source on-state resistance
RDS(ON)
I = 25A, V
= 10V
D
GS
2.0
V
4.0
V
=V
, I =250μA
GS
DS
D
Gate threshold voltage
VGS(TH)
Gate to drain charge (Miller charge)
QGD
5
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise specified)
C
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VSD
Diode forward voltage
I
= 42A, V
= 0V
SD
GS
2.5
V
Is (IsD)
Continuous source to drain current
Integral reverse P-N junction
diode in the MOSFET
42
D (Drain)
G
(Gate)
S (Source)
A
ISM
Pulsed source current
160
trr
Reverse recovery time
330
ns
I
= 42A, V
= 0V,
SD
GS
dI /dt = 100A/µs
F
Qrr
Reverse recovery charge
1.9
μC
Note:
1. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
www.nellsemi.com
Page 2 of 7
IRF150 Series
13
220
2.9
58
nH
Internal drain inductance
LD
LS
Internal source inductance
Between lead, 6mm(0.25”) form
package and center of die contact


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