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ISL9V3040D3SG-TF3-T Fiches technique(PDF) 2 Page - Unisonic Technologies |
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ISL9V3040D3SG-TF3-T Fiches technique(HTML) 2 Page - Unisonic Technologies |
2 / 4 page ISL9V3040D3S Preliminary Insulated Gate Bipolar Transistor UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R219-011.b ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Collector to Emitter Breakdown Voltage BVCER 510 V Emitter to Collector Voltage Reverse Battery Condition BVECS 30 V At Starting TJ=25°C, ISCIS=14.2A, L=3.0mHy ESCIS 300 mJ TJ= 150°C, ISCIS=10.6A, L=3.0mHy 170 mJ Continuous Collector Current TC=25°C IC 21 A TC=110°C 17 A Gate to Emitter Voltage Continuous VGEM ±10 V Power Dissipation Total at TC=25°C TO-220 PD 125 W TO-220F 41.6 Power Dissipation Derating TC>25°C TO-220 1 W/°C TO-220F 0.332 Electrostatic Discharge Voltage at 100pF, 1500Ω ESD 4 kV Junction Temperature TJ -40~175 °C Storage Temperature Range TSTG -40~175 °C Note: Absolute maximum ratings are stress ratings only and functional device operation is not implied. Absolute maximum ratings are those values beyond which the device could be permanently damaged. THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Case TO-220 θJC 1.0 °C/W TO-220F 3.0 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Off State Characteristics Collector to Emitter Breakdown Voltage BVCER IC=2mA, VGE=0V, RG=1KΩ, TJ=-40~150°C 310 510 V Collector to Emitter to Breakdown Voltage BVCES IC=10mA, VGE=0V, RG=0, TJ=-40~150°C 340 560 V Emitter to Collector Breakdown Voltage BVECS IC=-75mA, VGE=0V, TC=25°C 30 V Gate to Emitter Breakdown Voltage BVGES IGES=±2mA ±12 ±14 V Collector to Emitter Leakage Current ICER VCER=250V, RG=1KΩ TC=25°C 25 µA TC=150°C 1 mA Emitter to Collector Leakage Current IECS VEC=24V TC=25°C 1 mA TC=150°C 40 mA Series Gate Resistance R1 70 Ω Gate to Emitter Resistance R2 10K 26K Ω On State Characteristics Collector to Emitter Saturation Voltage VCE(SAT) IC=6A, VGE=4V TC=25°C 1.25 1.60 V IC=10A, VGE=4.5V TC=150°C 1.40 1.80 V IC=15A, VGE=4.5V TC=150°C 1.90 2.20 V Dynamic Characteristics Gate Charge QG(ON) IC=10A, VCE=12V, VGE=5V 17 nC Gate to Emitter Threshold Voltage VGE(TH) IC=1.0mA, VCE=VGE 1.3 2.2 V Gate to Emitter Plateau Voltage VGEP IC=10mA, VCE=12V 3.0 V Switching Characteristics Current Turn-On Delay Time-Resistive td(ON)R VCE=14V, RL=1Ω, VGE=5V, RG=1KΩ, TJ=25°C 0.48 4 μs Current Rise Time-Resistive trR 2.1 7 μs Current Turn-Off Delay Time-Inductive td(OFF)L 1.4 15 μs Current Fall Time Inductive tfL 2.2 15 μs Self Clamped Inductive Switching SCIS TJ= 25°C, L=3.0mHy, RG=1KΩ, 300 mJ |
Numéro de pièce similaire - ISL9V3040D3SG-TF3-T |
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Description similaire - ISL9V3040D3SG-TF3-T |
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