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ISL9V3040D3SG-TF3-T Fiches technique(PDF) 2 Page - Unisonic Technologies

No de pièce ISL9V3040D3SG-TF3-T
Description  300mJ, 400V, N-CHANNEL IGNITION IGBT
Download  4 Pages
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Fabricant  UTC [Unisonic Technologies]
Site Internet  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

ISL9V3040D3SG-TF3-T Fiches technique(HTML) 2 Page - Unisonic Technologies

  ISL9V3040D3SG-TF3-T Datasheet HTML 1Page - Unisonic Technologies ISL9V3040D3SG-TF3-T Datasheet HTML 2Page - Unisonic Technologies ISL9V3040D3SG-TF3-T Datasheet HTML 3Page - Unisonic Technologies ISL9V3040D3SG-TF3-T Datasheet HTML 4Page - Unisonic Technologies  
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ISL9V3040D3S
Preliminary
Insulated Gate Bipolar Transistor
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R219-011.b
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Emitter Breakdown Voltage
BVCER
510
V
Emitter to Collector Voltage Reverse Battery Condition
BVECS
30
V
At Starting
TJ=25°C, ISCIS=14.2A, L=3.0mHy
ESCIS
300
mJ
TJ= 150°C, ISCIS=10.6A, L=3.0mHy
170
mJ
Continuous Collector Current
TC=25°C
IC
21
A
TC=110°C
17
A
Gate to Emitter Voltage Continuous
VGEM
±10
V
Power Dissipation Total at TC=25°C
TO-220
PD
125
W
TO-220F
41.6
Power Dissipation Derating TC>25°C
TO-220
1
W/°C
TO-220F
0.332
Electrostatic Discharge Voltage at 100pF, 1500Ω
ESD
4
kV
Junction Temperature
TJ
-40~175
°C
Storage Temperature Range
TSTG
-40~175
°C
Note: Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Case
TO-220
θJC
1.0
°C/W
TO-220F
3.0
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Off State Characteristics
Collector to Emitter Breakdown Voltage
BVCER
IC=2mA, VGE=0V, RG=1KΩ,
TJ=-40~150°C
310
510
V
Collector to Emitter to Breakdown Voltage
BVCES
IC=10mA, VGE=0V, RG=0,
TJ=-40~150°C
340
560
V
Emitter to Collector Breakdown Voltage
BVECS
IC=-75mA, VGE=0V, TC=25°C
30
V
Gate to Emitter Breakdown Voltage
BVGES
IGES=±2mA
±12
±14
V
Collector to Emitter Leakage Current
ICER
VCER=250V,
RG=1KΩ
TC=25°C
25
µA
TC=150°C
1
mA
Emitter to Collector Leakage Current
IECS
VEC=24V
TC=25°C
1
mA
TC=150°C
40
mA
Series Gate Resistance
R1
70
Gate to Emitter Resistance
R2
10K
26K
On State Characteristics
Collector to Emitter Saturation Voltage
VCE(SAT)
IC=6A, VGE=4V
TC=25°C
1.25 1.60
V
IC=10A, VGE=4.5V TC=150°C
1.40 1.80
V
IC=15A, VGE=4.5V TC=150°C
1.90 2.20
V
Dynamic Characteristics
Gate Charge
QG(ON)
IC=10A, VCE=12V, VGE=5V
17
nC
Gate to Emitter Threshold Voltage
VGE(TH)
IC=1.0mA, VCE=VGE
1.3
2.2
V
Gate to Emitter Plateau Voltage
VGEP
IC=10mA, VCE=12V
3.0
V
Switching Characteristics
Current Turn-On Delay Time-Resistive
td(ON)R
VCE=14V, RL=1Ω, VGE=5V,
RG=1KΩ, TJ=25°C
0.48
4
μs
Current Rise Time-Resistive
trR
2.1
7
μs
Current Turn-Off Delay Time-Inductive
td(OFF)L
1.4
15
μs
Current Fall Time Inductive
tfL
2.2
15
μs
Self Clamped Inductive Switching
SCIS
TJ= 25°C, L=3.0mHy, RG=1KΩ,
300
mJ


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