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2N4170 Fiches technique(PDF) 1 Page - Digitron Semiconductors

No de pièce 2N4170
Description  SILICON CONTROLLED RECTIFIERS
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Fabricant  DIGITRON [Digitron Semiconductors]
Site Internet  http://www.digitroncorp.com
Logo DIGITRON - Digitron Semiconductors

2N4170 Fiches technique(HTML) 1 Page - Digitron Semiconductors

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DIGITRON SEMICONDUCTORS
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130108
2N4167-2N4174
SILICON CONTROLLED RECTIFIERS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive forward and reverse blocking voltage
2N4167
2N4168
2N4169
2N4170
2N4172
2N4174
VDRM, VRRM
25
50
100
200
400
600
V
Forward current RMS
IT(RMS)
8
A
Peak forward surge current
(one cycle, 60Hz, TJ = -40 to +100°C)
ITSM
100
A
Circuit fusing (t = 8.3ms)
I2t
40
A2s
Peak gate power
PGM
5
W
Average gate power
PG(AV)
0.5
W
Peak gate current
IGM
2
A
Peak gate voltage
VGM
10
V
Operating temperature range
TJ
-40 to +100
°C
Storage temperature range
Tstg
-40 to +150
°C
Stud torque
15
In. lb.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ.
Max
Unit
Thermal resistance, junction to case
R
ӨJC
1.5
2.5
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Peak forward or reverse blocking current
(Rated VDRM or VRRM, gate open)
TC = 25°C
TC = 100°C
IDRM, IRRM
-
-
-
-
10
2
µA
mA
Gate trigger current (continuous dc)
(VD = 7V, RL = 100Ω)
(VD = 7V, RL = 100Ω, TC = -40°C)
IGT
-
-
10
-
30
60
mA
Gate trigger voltage (continuous dc)
(VD = 7V, RL = 100Ω)
(VD = 7V, RL = 100Ω, TC = -40°C)
(VD = 7V, RL = 100Ω, TC = 100°C)
VGT
-
-
0.2
0.75
-
-
1.5
2.5
-
V
Forward “on” voltage (pulsed, 1ms max., duty cycle ≤ 1%)
(ITM = 15.7A)
VTM
-
1.4
2
V
Holding current
(VD = 7V, gate open)
(VD = 7V, gate open, TC = -40°C)
IH
-
-
10
-
30
60
mA
Turn-on time (td+tr)
(IG = 20mA, IF = 5A, VD = rated VDRM)
ton
-
1
-
µs
Turn-off time
(IF = 5A, IR = 5A)
(IF = 5A, IR = 5A, TC = 100°C, VD = rated VDRM)
(dv/dt = 30V/µs)
toff
-
-
15
25
-
-
µs
Forward voltage application rate (exponential)
dv/dt
V/µs


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