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2N4170 Fiches technique(PDF) 1 Page - Digitron Semiconductors |
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2N4170 Fiches technique(HTML) 1 Page - Digitron Semiconductors |
1 / 4 page DIGITRON SEMICONDUCTORS 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 fax +1.908.245-0555 sales@digitroncorp.com www.digitroncorp.com Rev. 20130108 2N4167-2N4174 SILICON CONTROLLED RECTIFIERS MAXIMUM RATINGS Rating Symbol Value Unit Peak repetitive forward and reverse blocking voltage 2N4167 2N4168 2N4169 2N4170 2N4172 2N4174 VDRM, VRRM 25 50 100 200 400 600 V Forward current RMS IT(RMS) 8 A Peak forward surge current (one cycle, 60Hz, TJ = -40 to +100°C) ITSM 100 A Circuit fusing (t = 8.3ms) I2t 40 A2s Peak gate power PGM 5 W Average gate power PG(AV) 0.5 W Peak gate current IGM 2 A Peak gate voltage VGM 10 V Operating temperature range TJ -40 to +100 °C Storage temperature range Tstg -40 to +150 °C Stud torque 15 In. lb. THERMAL CHARACTERISTICS Characteristic Symbol Typ. Max Unit Thermal resistance, junction to case R ӨJC 1.5 2.5 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise noted) Characteristic Symbol Min Typ Max Unit Peak forward or reverse blocking current (Rated VDRM or VRRM, gate open) TC = 25°C TC = 100°C IDRM, IRRM - - - - 10 2 µA mA Gate trigger current (continuous dc) (VD = 7V, RL = 100Ω) (VD = 7V, RL = 100Ω, TC = -40°C) IGT - - 10 - 30 60 mA Gate trigger voltage (continuous dc) (VD = 7V, RL = 100Ω) (VD = 7V, RL = 100Ω, TC = -40°C) (VD = 7V, RL = 100Ω, TC = 100°C) VGT - - 0.2 0.75 - - 1.5 2.5 - V Forward “on” voltage (pulsed, 1ms max., duty cycle ≤ 1%) (ITM = 15.7A) VTM - 1.4 2 V Holding current (VD = 7V, gate open) (VD = 7V, gate open, TC = -40°C) IH - - 10 - 30 60 mA Turn-on time (td+tr) (IG = 20mA, IF = 5A, VD = rated VDRM) ton - 1 - µs Turn-off time (IF = 5A, IR = 5A) (IF = 5A, IR = 5A, TC = 100°C, VD = rated VDRM) (dv/dt = 30V/µs) toff - - 15 25 - - µs Forward voltage application rate (exponential) dv/dt V/µs |
Numéro de pièce similaire - 2N4170 |
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Description similaire - 2N4170 |
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