TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C

2

Motorola Bipolar Power Transistor Device Data

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

TIP41A, TIP42A

(IC = 30 mAdc, IB = 0)

TIP41B, TIP42B

TIP41C, TIP42C

VCEO(sus)

60

80

100

—

—

—

Vdc

Collector Cutoff Current

TIP41A, TIP42A

(VCE = 30 Vdc, IB = 0)

TIP41B, TIP41C

(VCE = 60 Vdc, IB = 0)

TIP42B, TIP42C

ICEO

—

—

—

0.7

0.7

0.7

mAdc

Collector Cutoff Current

(VCE = 60 Vdc, VEB = 0)

TIP41A, TIP42A

(VCE = 80 Vdc, VEB = 0)

TIP41B, TIP42B

(VCE = 100 Vdc, VEB = 0)

TIP41C, TIP42C

ICES

—

—

—

400

400

400

µAdc

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

IEBO

—

1.0

mAdc

ON CHARACTERISTICS (1)

DC Current Gain (IC = 0.3 Adc, VCE = 4.0 Vdc)

hFE

30

15

—

75

—

Collector–Emitter Saturation Voltage (IC = 6.0 Adc, IB = 600 mAdc)

VCE(sat)

—

1.5

Vdc

Base–Emitter On Voltage (IC = 6.0 Adc, VCE = 4.0 Vdc)

VBE(on)

—

2.0

Vdc

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)

fT

3.0

—

MHz

Small–Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

20

—

—

(1) Pulse Test: Pulse Width

v 300 µs, Duty Cycle v 2.0%.

Figure 1. Power Derating

T, TEMPERATURE (

°C)

0

100

0

20

160

40

60

60

80

40

140

80

Figure 2. Switching Time Test Circuit

0.06

Figure 3. Turn–On Time

IC, COLLECTOR CURRENT (AMP)

0.02

0.4

6.0

0.07

1.0

4.0

TJ = 25°C

VCC = 30 V

IC/IB = 10

0.5

0.3

0.1

0.05

0.1

0.6

1.0

td @ VBE(off) ≈ 5.0 V

0.03

0.7

2.0

0.2

2.0

tr

20

120

TC

TC

0

1.0

2.0

3.0

4.0

TA

TA

+11 V

25

µs

0

– 9.0 V

RB

– 4 V

D1

SCOPE

VCC

+ 30 V

RC

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

0.2