STP36N55M5 datasheet(8/15 Pages) STMICROELECTRONICS

No de pièce	STP36N55M5

Description	N-channel 550 V, 0.06 typ., 33 A MDmesh V Power MOSFET in TO-220 and TO-247 packages

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STP36N55M5, STW36N55M5

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Doc ID 022902 Rev 2

Figure 14.

Source-drain diode forward

characteristics

Figure 15.

Normalized BVDSS vs temperature

Figure 16.

Switching losses vs gate resistance

(1)

1.

Eon including reverse recovery of a SiC diode

VSD

0

20

ISD(A)

(V)

10

50

30

40

0

0.2

0.4

0.6

0.8

1.0

1.2

TJ=-50°C

TJ=150°C

TJ=25°C

AM05461v3

VDS

-50

0

TJ(°C)

(norm)

-25

75

25

50

100

0.92

0.94

0.96

0.98

1.00

1.04

1.06

1.02

ID = 1mA

1.08

AM10399v1

E

300

200

100

0

20

RG(

Ω)

(

μJ)

10

30

400

500

600

40

ID=22A

VDD=400V

Eon

Eoff

VGS=10V

AM14936v1

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