STP40N20 datasheet(5/18 Pages) STMICROELECTRONICS

No de pièce	STP40N20

Description	N-channel 200V - 0.038 -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET Power MOSFET

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

Site Internet	http://www.st.com

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5 / 18 page

Obsolete

Product(s)

- Obsolete

Product(s)

STB40N20 - STP40N20 - STP40N20FP - STW40N20

Electrical characteristics

5/18

Table 6.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area.

Source-drain current

(pulsed)

40

160

A

VSD

(2)

2.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Forward on voltage

ISD = 20A, VGS = 0

1.5

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 20A,

di/dt = 100A/µs,

VDD = 25V

(see Figure 18)

192

922

9.6

ns

nC

A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 20A,

di/dt = 100A/µs,

VDD = 25V, Tj = 150°C

(see Figure 18)

242

1440

11.9

ns

nC

A

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Fabricant	No de pièce	Fiches technique	Description
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STP40N20 Fiches technique(PDF) 5 Page - STMicroelectronics

STP40N20 Fiches technique(HTML) 5 Page - STMicroelectronics

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