Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

SI7465DP-T1-GE3 Fiches technique(PDF) 2 Page - Vishay Siliconix

No de pièce SI7465DP-T1-GE3
Description  P-Channel 60 V (D-S) MOSFET
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI7465DP-T1-GE3 Fiches technique(HTML) 2 Page - Vishay Siliconix

  SI7465DP-T1-GE3 Datasheet HTML 1Page - Vishay Siliconix SI7465DP-T1-GE3 Datasheet HTML 2Page - Vishay Siliconix SI7465DP-T1-GE3 Datasheet HTML 3Page - Vishay Siliconix SI7465DP-T1-GE3 Datasheet HTML 4Page - Vishay Siliconix SI7465DP-T1-GE3 Datasheet HTML 5Page - Vishay Siliconix SI7465DP-T1-GE3 Datasheet HTML 6Page - Vishay Siliconix SI7465DP-T1-GE3 Datasheet HTML 7Page - Vishay Siliconix SI7465DP-T1-GE3 Datasheet HTML 8Page - Vishay Siliconix  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
Si7465DP
www.vishay.com
Vishay Siliconix
S13-2263-Rev. D, 04-Nov-13
2
Document Number: 73113
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width
 300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = -250 μA
-1
-3
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = -60 V, VGS = 0 V
-1
μA
VDS = -60 V, VGS = 0 V, TJ = 70 °C
-10
On-State Drain Currenta
ID(on)
VDS  -5 V, VGS = -10 V
-25
A
Drain-Source On-State Resistancea
RDS(on)
VGS = -10 V, ID = -5 A
0.051
0.064
VGS = -4.5 V, ID = -4.5 A
0.064
0.080
Forward Transconductancea
gfs
VDS = -15 V, ID = -5 A
16
S
Diode Forward Voltagea
VSD
IS = -2.9 A, VGS = 0 V
-0.8
-1.2
V
Dynamicb
Total Gate Charge
Qg
VDS = -30 V, VGS = -10 V, ID = -5 A
26
40
nC
Gate-Source Charge
Qgs
4.5
Gate-Drain Charge
Qgd
7
Gate Resistance
Rg
7
Turn-On Delay Time
td(on)
VDD = -30 V, RL = 30 
ID  -1 A, VGEN = –10 V, Rg = 6 
815
ns
Rise Time
tr
915
Turn-Off Delay Time
td(off)
65
100
Fall Time
tf
30
45
Source-Drain Reverse Recovery Time
trr
IF = -5 A, dI/dt = 100 A/μs
41
70
0
5
10
15
20
25
30
0
2468
10
VGS = 10 V thru 5 V
3 V
VDS - Drain-to-Source Voltage (V)
4 V
0
5
10
15
20
25
30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
25 °C
TC= 125 °C
- 55 °C
VGS - Gate-to-Source Voltage (V)


Numéro de pièce similaire - SI7465DP-T1-GE3

FabricantNo de pièceFiches techniqueDescription
logo
Vishay Siliconix
SI7465DP VISHAY-SI7465DP Datasheet
226Kb / 3P
   P-Channel 60-V (D-S) MOSFET
Rev. B, 12-Dec-05
SI7465DP VISHAY-SI7465DP Datasheet
326Kb / 12P
   P-Channel 60 V (D-S) MOSFET
01-Jan-2022
SI7465DP VISHAY-SI7465DP_13 Datasheet
150Kb / 8P
   P-Channel 60-V (D-S) MOSFET
Rev. C, 16-Feb-09
SI7465DP VISHAY-SI7465DP_V01 Datasheet
326Kb / 12P
   P-Channel 60 V (D-S) MOSFET
01-Jan-2022
More results

Description similaire - SI7465DP-T1-GE3

FabricantNo de pièceFiches techniqueDescription
logo
Vishay Siliconix
SI6459BDQ VISHAY-SI6459BDQ Datasheet
78Kb / 5P
   P-Channel 60-V (D-S) MOSFET
Rev. A, 03-Nov-03
logo
Bruckewell Technology L...
MSD30P06 BWTECH-MSD30P06 Datasheet
544Kb / 5P
   P-Channel 60-V (D-S) MOSFET
logo
Analog Power
AM90P06-20B ANALOGPOWER-AM90P06-20B Datasheet
367Kb / 5P
   P-Channel 60-V (D-S) MOSFET
AM30P06-40D ANALOGPOWER-AM30P06-40D Datasheet
350Kb / 5P
   P-Channel 60-V (D-S) MOSFET
logo
Vishay Siliconix
TP0610K VISHAY-TP0610K_06 Datasheet
199Kb / 4P
   P-Channel 60-V (D-S) MOSFET
Rev. B, 02-Jan-06
SI3459DV VISHAY-SI3459DV Datasheet
62Kb / 4P
   P-Channel 60-V (D-S) MOSFET
Rev. B, 29-Nov-99
SI6459DQ VISHAY-SI6459DQ Datasheet
60Kb / 4P
   P-Channel 60-V (D-S) MOSFET
Rev. D, 29-Nov-99
logo
Analog Power
AM7461P ANALOGPOWER-AM7461P Datasheet
182Kb / 3P
   P-Channel 60-V (D-S) MOSFET
AM7463P ANALOGPOWER-AM7463P Datasheet
357Kb / 5P
   P-Channel 60-V (D-S) MOSFET
logo
Vishay Siliconix
SI7461DP VISHAY-SI7461DP_05 Datasheet
202Kb / 4P
   P-Channel 60-V (D-S) MOSFET
Rev. B, 12-Dec-05
logo
Analog Power
AM90P06-08P ANALOGPOWER-AM90P06-08P Datasheet
345Kb / 5P
   P-Channel 60-V (D-S) MOSFET
More results


Html Pages

1 2 3 4 5 6 7 8


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com