CAT28F002PI-15TT datasheet(5/16 Pages) CATALYST

No de pièce	CAT28F002PI-15TT

Description	2 Megabit CMOS Boot Block Flash Memory

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Fabricant	CATALYST [Catalyst Semiconductor]

Site Internet	http://www.catalyst-semiconductor.com

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CAT28F002

5

Doc. No. 25072-00 2/98 F-1

SUPPLY CHARACTERISTICS

Limits

Symbol

Parameter

Min

Max.

Unit

VLKO

VCC Erase/Write Lock Voltage

2.0

V

VCC

VCC Supply Voltage

4.5

5.5

V

VPPL

VPP During Read Operations

0

6.5

V

VPPH

VPP During Erase/Program

11.4

12.6

V

VHH

RP, OE Unlock Voltage

10.8

13.2

V

VPPLK

VPP Lock-Out Voltage

0

6.5

V

Note:

(1)

This parameter is tested initially and after a design or process change that affects the parameter.

(2)

Output floating (High-Z) is defined as the state where the external data line is no longer driven by the output buffer.

(3)

Input Rise and Fall Times (10% to 90%) < 10 ns.

(4)

Input Pulse Levels = 0.45V and 2.4V.

(5)

Input and Output Timing Reference = 0.8V and 2.0V.

(6)

Low-Z is defined as the state where the external data may be driven by the output buffer but may not be valid.

5108 FHD F04

1.3V

DEVICE

UNDER

TEST

1N914

3.3K

CL = 100 pF

OUT

CL INCLUDES JIG CAPACITANCE

Figure 2. A.C. Testing Load Circuit (example)

INPUT PULSE LEVELS

REFERENCE POINTS

2.0 V

0.8 V

2.4 V

0.45 V

5108 FHD F03

Figure 1. A.C. Testing Input/Output Waveform(3)(4)(5)

A.C. CHARACTERISTICS, Read Operation

VCC = +5V ±10%, unless otherwise specified

JEDEC

Standard

28F002-90

28F002-12

28F002-15

Symbol

Parameter

Min. Max.

Min. Max. Min. Max. Unit

tAVAV

tRC

Read Cycle Time

90

120

150

ns

tELQV

tCE

CE Access Time

90

120

150

ns

tAVQV

tACC

Address Access Time

90

120

150

ns

tGLQV

tOE

OE Access Time

40

ns

-tOH

Output Hold from Address

OE/CE Change

0

ns

tGLQX

tOLZ(1)(6) OE to Output in Low-Z

0

ns

tELQX

tLZ(1)(6)

CE to Output in Low-Z

0

ns

tGHQZ

tDF(1)(2)

OE High to Output High-Z

30

ns

tEHQZ

tHZ(1)(2)

CE High to Output High-Z

30

ns

tPHQV

tPWH

RP High to Output Delay

300

ns

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