2SC2837 datasheet(1/1 Pages) SANKEN

No de pièce	2SC2837

Description	Silicon NPN Epitaxial Planar Transistor

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Fabricant	SANKEN [Sanken electric]

Site Internet	http://www.sanken-ele.co.jp/en

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60

Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1186)

Application : Audio and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

Ratings

150

5

10

2

100(Tc=25°C)

150

–55 to +150

Unit

V

A

W

°C

sAbsolute maximum ratings

sElectrical Characteristics

sTypical Switching Characteristics (Common Emitter)

Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

Ratings

100max

150min

50min

∗

2.0max

70typ

60typ

Unit

µA

V

MHz

pF

Conditions

VCB=150V

VEB=5V

IC=25mA

VCE=4V, IC=3V

IC=5A, IB=0.5A

VCE=12V, IE=–1A

VCB=80V, f=1MHz

VCC

(V)

60

RL

(

Ω)

12

IC

(A)

5

VB2

(V)

–5

IB2

(mA)

–500

ton

(

µs)

0.2typ

tstg

(

µs)

1.4typ

tf

(

µs)

0.35typ

IB1

(mA)

500

LAPT

2SC2837

(Ta=25°C)

I C– V CE Characteristics (Typical)

h FE– I C Characteristics (Typical)

h FE– I C Temperature Characteristics (Typical)

θj-a–t Characteristics

I C– V BE Temperature Characteristics (Typical)

V CE(sat) – I B Characteristics (Typical)

Pc – T a Derating

Safe Operating Area (Single Pulse)

f T– I E Characteristics (Typical)

0

3

2

1

0

0.5

1.0

2.0

1.5

Base Current I B(A)

I C=10A

5A

0

10

2

6

4

8

02

1

Base-Emittor Voltage V BE(V)

(V CE=4V)

0.2

1

3

0.5

1

1 0

100

1000 2000

Time t(ms)

100

50

3.5

0

2 5

5 0

7 5

100

125

150

Ambient Temperature Ta(˚C)

Without Heatsink

2

1 0

100

200

0.2

1

0.5

10

30

5

Collector-Emitter Voltage V CE(V)

DC

Without Heatsink

Natural Cooling

0.02

0.1

1

1 0

20

50

100

200

Collector Current I C(A)

(V CE=4V)

Typ

0

2

4

6

10

8

2

13

4

Collector-Emitter Voltage V CE(V)

300mA

200mA

160mA

120mA

80mA

40mA

I B=20mA

400mA

(V CE=4V)

0.02

0.1

0.5

0.05

10

5

1

Collector Current I C(A)

20

50

100

200

125˚C

25˚C

–30˚C

–0.02

–0.1

–1

–6

40

20

0

120

100

80

60

(V CE=12V)

Emitter Current I E(A)

Typ

External Dimensions MT-100(TO3P)

15.6±0.4

9.6

ø3.2±0.1

2

3

1.05

+0.2

-0.1

BE

5.45±0.1

C

4.8±0.2

0.65

+0.2

-0.1

1.4

2.0±0.1

a

b

Weight : Approx 6.0g

a. Part No.

b. Lot No.

∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)

Numéro de pièce similaire - 2SC2837

Fabricant	No de pièce	Fiches technique	Description
Mospec Semiconductor	2SC2837	115Kb / 3P	POWER TRANSISTORS(10A,150V,100W)
Sanken electric	2SC2837	23Kb / 1P	Silicon NPN Epitaxial Planar Transistor(Audio and General Purpose)
Savantic, Inc.	2SC2837	176Kb / 4P	Silicon NPN Power Transistors
Inchange Semiconductor ...	2SC2837	165Kb / 4P	Silicon NPN Power Transistors
Savantic, Inc.	2SC2837	178Kb / 4P	Silicon NPN Power Transistors

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Fabricant	No de pièce	Fiches technique	Description
Seme LAB	BFY84	19Kb / 2P	SILICON PLANAR EPITAXIAL NPN TRANSISTOR
AUK corp	SUR541EF	176Kb / 4P	NPN Epitaxial Planar Silicon Transistor
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KODENSHI_AUK CORP.	SUR526H	275Kb / 5P	Epitaxial planar NPN silicon transistor
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Sanken electric	2SC2921	33Kb / 1P	Silicon NPN Epitaxial Planar Transistor
Seme LAB	2N4239	122Kb / 3P	SILICON PLANAR EPITAXIAL NPN TRANSISTOR
Seme LAB	2N3114CSM	163Kb / 3P	SILICON PLANAR EPITAXIAL NPN TRANSISTOR
Micro Electronics	BC485	57Kb / 1P	NPN SILICON PLANAR EPITAXIAL TRANSISTOR
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