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BZX84-A4V3 Fiches technique(PDF) 9 Page - NXP Semiconductors |
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BZX84-A4V3 Fiches technique(HTML) 9 Page - NXP Semiconductors |
9 / 16 page BZX84_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 6 — 6 March 2014 9 of 16 NXP Semiconductors BZX84 series Voltage regulator diodes (1) Tj =25 C (before surge) (2) Tj = 150 C (before surge) Tj =25 C Fig 1. Non-repetitive peak reverse power dissipation as a function of pulse duration; maximum values Fig 2. Forward current as a function of forward voltage; typical values BZX84-A/B/C2V4 to BZX84-A/B/C4V3 Tj =25 C to 150 C BZX84-A/B/C4V7 to BZX84-A/B/C12 Tj =25 C to 150 C Fig 3. Temperature coefficient as a function of working current; typical values Fig 4. Temperature coefficient as a function of working current; typical values mbg801 103 1 tp (ms) PZSM (W) 10 102 10−1 10 1 (1) (2) VF (V) 0.6 1 0.8 mbg781 100 200 300 IF (mA) 0 060 0 −2 −3 −1 mbg783 20 40 IZ (mA) SZ (mV/K) 4V3 3V9 3V6 3V0 2V4 2V7 3V3 020 16 10 0 −5 5 mbg782 48 12 IZ (mA) SZ (mV/K) 4V7 12 11 10 9V1 8V2 7V5 6V8 6V2 5V6 5V1 |
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