FCD900N60ZCT-ND datasheet(3/9 Pages) FAIRCHILD

No de pièce	FCD900N60ZCT-ND

Description	FCD900N60Z N-Channel SuperFET II MOSFET 600 V, 4.5 A, 900 m廓

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Fabricant	FAIRCHILD [Fairchild Semiconductor]

Site Internet	http://www.fairchildsemi.com

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3 / 9 page

FCD900N60Z Rev. C3

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3

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage

Variation vs. Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

0.2

1

10

20

0.1

1

10

20

*Notes:

1. 250μs Pulse Test

2. TC = 25

oC

VDS, Drain to Source Voltage[V]

VGS = 10.0V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

4.0V

2468

0.1

1

10

20

-55

oC

150

oC

*Notes:

1. VDS = 20V

2. 250μs Pulse Test

25

oC

VGS, Gate to Source Voltage[V]

0.4

0.8

1.2

1.6

0.1

1

10

50

*Notes:

1. V

GS = 0V

2. 250μs Pulse Test

150

oC

V

SD, Body Diode Forward Voltage [V]

25

oC

03

69

12

0.4

0.8

1.2

1.6

2.0

*Note: TC = 25

oC

VGS = 20V

VGS = 10V

ID, Drain Current [A]

0369

12

15

0

2

4

6

8

10

*Note: ID = 2.3A

VDS = 120V

VDS = 300V

VDS = 480V

Qg, Total Gate Charge [nC]

0.1

1

10

100

600

0.5

1

10

100

1000

10000

Coss

Ciss

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

*Note:

1. VGS = 0V

2. f = 1MHz

Crss

VDS, Drain to Source Voltage [V]

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