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FQA10N80C-F109 Fiches technique(PDF) 1 Page - Fairchild Semiconductor |
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FQA10N80C-F109 Fiches technique(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page November 2013 ©2006 Fairchild Semiconductor Corporation FQA10N80C_F109 Rev. C1 www.fairchildsemi.com 1 MOSFET Maximum Ratings T C = 25 oC unless otherwise noted. Thermal Characteristics Symbol Parameter FQA10N80C_F109 Unit VDSS Drain to Source Voltage 800 V ID Drain Current -Continuous (TC = 25oC) 10 A -Continuous (TC = 100oC) 6.32 A IDM Drain Current - Pulsed (Note 1) 40 A VGSS Gate to Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 920 mJ IAR Avalanche Current (Note 1) 10 A EAR Repetitive Avalanche Energy (Note 1) 24 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns PD Power Dissipation (TC = 25oC) 240 W - Derate above 25oC 1.92 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 °C Symbol Parameter FQA10N80C_F109 Unit RθJC Thermal Resistance, Junction to Case, Max 0.52 oC/W RθJA Thermal Resistance, Junction to Ambient, Max 40 oC/W FQA10N80C_F109 N-Channel QFET® MOSFET 800 V, 10 A, 1.1 Ω Features • 10 A, 800 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5 A • Low Gate Charge (Typ. 44 nC) • Low Crss (Typ. 15 pF) • 100% Avalanche Tested • RoHS compliant Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. TO-3PN G D S G S D |
Numéro de pièce similaire - FQA10N80C-F109 |
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Description similaire - FQA10N80C-F109 |
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