IRF7501PbF

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5

Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 8. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 9. Typical Gate Charge Vs.

Gate-to-Source Voltage

0

100

200

300

400

500

1

10

100

DS

V

, Drain-to-Source Voltage (V)

A

V

= 0V,

f = 1MHz

C

= C

+ C

, C

SHORTED

C

= C

C

= C

+ C

GS

iss

gs

gd

ds

rss

gd

oss

ds

gd

0

2

4

6

8

10

024

68

10

G

A

Q , Total Gate Charge (nC)

FOR TEST CIRCUIT

SEE FIGURE 9

I = 1.7A

V

= 16V

D

DS

0.1

1

10

100

1000

0.00001

0.0001

0.001

0.01

0.1

1

10

100

Notes:

1. Duty factor D = t / t

2. Peak T = P

x Z

+ T

1

2

J

DM

thJA

A

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

1

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)