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STC4350F Fiches technique(PDF) 1 Page - KODENSHI_AUK CORP. |
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STC4350F Fiches technique(HTML) 1 Page - KODENSHI_AUK CORP. |
1 / 6 page KSD-T5B008-005 1 STC4350F NPN Silicon Transistor SOT-89 PIN Connection Applications • Power amplifier application • High current switching application Features • Low saturation voltage: VCE(sat)=0.15V Typ. @ IC=1A, IB=50mA • Large collector current capacity: IC=3A • Small and compact SMD type package • Complementary pair with STA3350F • “Green” device and RoHS compliant device • Available in full lead (Pb)-free device Ordering Information Type NO. Marking Package Code STC4350F HW8 YWW SOT-89 HW8 : DEVICE CODE, YWW(Y : Year code, WW : Weekly code) Absolute Maximum Ratings [Ta=25℃] Characteristic Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6 V Collector current IC 3 A(DC) ICP* 6 A(Pulse) Collector Power dissipation PC 0.5 W PC** 1 W Junction temperature TJ 150 °C Storage temperature range Tstg -55~150 °C * : Single pulse, tp= 300 ㎲ ** : Device mounted on ceramic substrate (250mm2ⅹ0.8t) Characteristic Symbol Typ. Max Unit Thermal resistance Junction-ambient Rth(J-a) - 250 ℃ /W - 125** ℃ /W |
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