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ADS7841 Datasheet(Fiches technique) 4 Page - Burr-Brown (TI)

[Old version datasheet] Texas Instruments acquired Burr-Brown Corporation. Click here to check the latest version.
Numéro de pièce ADS7841
Description  12-Bit, 4-Channel Serial Output Sampling ANALOG-TO-DIGITAL CONVERTER
Télécharger  14 Pages
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Fabricant  BURR-BROWN [Burr-Brown (TI)]
Site Internet  http://www.burr-brown.com
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 4 page
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®
4
ADS7841
PIN CONFIGURATIONS
Top View
MINIMUM
RELATIVE
DIFFERENTIAL
SPECIFICATION
PACKAGE
ACCURACY
NONLINEARITY
TEMPERATURE
DRAWING
ORDERING
TRANSPORT
PRODUCT
(LSB)
(LSB)
RANGE
PACKAGE
NUMBER(1)
NUMBER(2)
MEDIA
ADS7841E
±2
68
–40
°C to +85°C
16-Lead SSOP
322
ADS7841E
Rails
"
"
"
"
"
"
ADS7841E/2K5
Tape and Reel
ADS7841P
±2
68
–40
°C to +85°C
16-Pin PDIP
180
ADS7841P
Rails
ADS7841EB
±1
70
–40
°C to +85°C
16-Lead SSOP
322
ADS7841EB
Rails
"
"
"
"
"
"
ADS7841EB/2K5
Tape and Reel
ADS7841PB
±1
70
–40
°C to +85°C
16-Pin PDIP
180
ADS7841PB
Rails
NOTES: (1) For detailed drawing and dimension table, please see end of data sheet, or Appendix C of Burr-Brown IC Data Book. (2) Models with a slash (/) are
available only in Tape and Reel in the quantities indicated (e.g., /2K5 indicates 2500 devices per reel). Ordering 2500 pieces of “ADS7841/2K5” will get a single
2500-piece Tape and Reel. For detailed Tape and Reel mechanical information, refer to Appendix B of Burr-Brown IC Data Book.
PACKAGE/ORDERING INFORMATION
1
2
3
4
5
6
7
8
+V
CC
CH0
CH1
CH2
CH3
COM
SHDN
V
REF
DCLK
CS
DIN
BUSY
DOUT
MODE
GND
+V
CC
16
15
14
13
12
11
10
9
ADS7841
1
2
3
4
5
6
7
8
+V
CC
CH0
CH1
CH2
CH3
COM
SHDN
V
REF
DCLK
CS
DIN
BUSY
DOUT
MODE
GND
+V
CC
16
15
14
13
12
11
10
9
ADS7841
DIP
SSOP
PIN DESCRIPTIONS
PIN
NAME
DESCRIPTION
1+VCC
Power Supply, 2.7V to 5V.
2
CH0
Analog Input Channel 0.
3
CH1
Analog Input Channel 1.
4
CH2
Analog Input Channel 2.
5
CH3
Analog Input Channel 3.
6
COM
Ground Reference for Analog Inputs. Sets zero code voltage in single-ended mode. Connect this pin to ground or ground reference
point.
7
SHDN
Shutdown. When LOW, the device enters a very low power shutdown mode.
8VREF
Voltage Reference Input
9+VCC
Power Supply, 2.7V to 5V.
10
GND
Ground
11
MODE
Conversion Mode. When LOW, the device always performs a 12-bit conversion. When HIGH, the resolution is set by the MODE bit in
the CONTROL byte.
12
DOUT
Serial Data Output. Data is shifted on the falling edge of DCLK. This output is high impedance when CS is HIGH.
13
BUSY
Busy Output. This output is high impedance when CS is HIGH.
14
DIN
Serial Data Input. If CS is LOW, data is latched on rising edge of DCLK.
15
CS
Chip Select Input. Controls conversion timing and enables the serial input/output register.
16
DCLK
External Clock Input. This clock runs the SAR conversion process and synchronizes serial data I/O.
ABSOLUTE MAXIMUM RATINGS(1)
+VCC to GND ......................................................................... –0.3V to +6V
Analog Inputs to GND ............................................ –0.3V to +VCC + 0.3V
Digital Inputs to GND ........................................................... –0.3V to +6V
Power Dissipation .......................................................................... 250mW
Maximum Junction Temperature ................................................... +150
°C
Operating Temperature Range ....................................... –40
°C to +85°C
Storage Temperature Range ......................................... –65
°C to +150°C
Lead Temperature (soldering, 10s) ............................................... +300
°C
NOTE: (1) Stresses above those listed under “Absolute Maximum Ratings”
may cause permanent damage to the device. Exposure to absolute maximum
conditions for extended periods may affect device reliability.
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and
installation procedures can cause damage.
ESD damage can range from subtle performance degradation to
complete device failure. Precision integrated circuits may be
more susceptible to damage because very small parametric
changes could cause the device not to meet its published specifi-
cations.




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