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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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CSD88537NDT Fiches technique(PDF) 2 Page - Texas Instruments |
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CSD88537NDT Fiches technique(HTML) 2 Page - Texas Instruments |
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2 / 13 page  CSD88537ND SLPS455 – JANUARY 2014 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 250 μA 60 V IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 48 V 1 μA IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 20 V 100 nA VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA 2.6 3.0 3.6 V VGS = 6 V, ID = 8 A 15.0 19.0 m Ω RDS(on) Drain-to-Source On Resistance VGS = 10 V, ID = 8 A 12.5 15.0 m Ω gfs Transconductance VDS = 30 V, ID = 8 A 42 S Dynamic Characteristics Ciss Input Capacitance 1080 1400 pF Coss Output Capacitance VGS = 0 V, VDS = 30 V, f = 1 MHz 133 173 pF Crss Reverse Transfer Capacitance 4.0 5.2 pF RG Series Gate Resistance 5.5 11.0 Ω Qg Gate Charge Total (10 V) 14 18 nC Qgd Gate Charge Gate to Drain 2.3 nC VDS = 30 V, ID = 8 A Qgs Gate Charge Gate to Source 4.6 nC Qg(th) Gate Charge at Vth 3.4 nC Qoss Output Charge VDS = 30 V, VGS = 0 V 25 nC td(on) Turn On Delay Time 6 ns tr Rise Time 15 ns VDS = 30 V, VGS = 10 V, IDS = 8 A, RG = 0 Ω td(off) Turn Off Delay Time 5 ns tf Fall Time 19 ns Diode Characteristics VSD Diode Forward Voltage ISD = 8 A, VGS = 0 V 0.8 1 V Qrr Reverse Recovery Charge 50 nC VDS= 30 V, IF = 8 A, di/dt = 300 A/μs trr Reverse Recovery Time 30 ns THERMAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER MIN TYP MAX UNIT RθJL Thermal Resistance Junction to Lead(1) 20 °C/W RθJA Thermal Resistance Junction to Ambient(1)(2) 75 °C/W (1) RθJC is determined with the device mounted on a 1-inch 2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design. (2) Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu. 2 Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated Product Folder Links: CSD88537ND |
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Description similaire - CSD88537NDT |
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