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CSD85312Q3E Fiches technique(PDF) 1 Page - Texas Instruments |
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CSD85312Q3E Fiches technique(HTML) 1 Page - Texas Instruments |
1 / 13 page Drain 1 Drain 2 Common Gate Common Source 0 3 6 9 12 15 18 21 24 27 30 0 1 2 3 4 5 6 7 8 9 10 VGS - Gate-to- Source Voltage (V) TC = 25°C, Id = 10A TC = 125ºC, Id = 10A G001 D1 1 D1 2 D1 3 NC 4 8 D2 7 D2 6 D2 5 G S CSD85312Q3E www.ti.com SLPS457 – NOVEMBER 2013 Dual 20 V N-Channel NexFET™ Power MOSFETs . 1 FEATURES PRODUCT SUMMARY • Common Source Connection TA = 25°C TYPICAL VALUE UNIT • Low Drain to Drain On-Resistance VDS Drain to Source Voltage 20 V • Space Saving SON 3.3 x 3.3 mm Plastic Qg Gate Charge Total (4.5 V) 11.7 nC Package Qgd Gate Charge Gate to Drain 1.6 nC VGS = 4.5 V 11.7 m Ω • Optimized for 5 V Gate Drive Drain to Drain On Resistance RDD(on) (Q1 + Q2) VGS = 8 V 10.3 m Ω • Low Thermal Resistance VGS(th) Threshold Voltage 1.1 V • Avalanche Rated • Pb-Free Terminal Plating ORDERING INFORMATION • RoHS Compliant Device Package Media Qty Ship • Halogen Free SON 3.3 x 3.3 mm 13 Inch Tape and CSD85312Q3E 2500 Plastic Package Reel Reel APPLICATIONS ABSOLUTE MAXIMUM RATINGS • Adaptor or USB Input Protection for Notebook TA = 25°C VALUE UNIT PCs and Tablets VDS Drain to Source Voltage 20 V VGS Gate to Source Voltage +10/–8 V DESCRIPTION Continuous Drain Current (Package Limited) 39 A ID The CSD85312Q3E is a 20 V common-source, dual Continuous Drain Current (1) 12 A N-channel device designed for adaptor or USB input IDM Pulsed Drain Current (2) 76 A protection. This SON 3.3 x 3.3 mm device has low PD Power Dissipation 2.5 W drain to drain on-resistance that minimizes losses and TJ, Operating Junction and Storage Temperature –55 to offers low component count for space constrained °C TSTG Range 150 multi-cell battery charging applications. Avalanche Energy, Single Pulse EAS 72 mJ ID = 38 A, L = 0.1 mH, RG = 25 Ω Top View (1) Typical RθJA =63°C/W on 1 inch 2 (2 oz.) on 0.060 inch thick FR4PCB (2) Pulse duration ≤ 300 μs, duty cycle ≤ 2% TEXT ADDED FOR SPACING VGS vs. RDD(on) Circuit Image 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Copyright © 2013, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
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