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CSD85312Q3E Fiches technique(PDF) 1 Page - Texas Instruments

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No de pièce CSD85312Q3E
Description  Dual 20 V N-Channel NexFET Power MOSFETs
Download  13 Pages
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Fabricant  TI1 [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI1 - Texas Instruments

CSD85312Q3E Fiches technique(HTML) 1 Page - Texas Instruments

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background image
Drain 1
Drain 2
Common Gate
Common Source
0
3
6
9
12
15
18
21
24
27
30
0
1
2
3
4
5
6
7
8
9
10
VGS - Gate-to- Source Voltage (V)
TC = 25°C, Id = 10A
TC = 125ºC, Id = 10A
G001
D1
1
D1
2
D1
3
NC
4
8
D2
7
D2
6
D2
5
G
S
CSD85312Q3E
www.ti.com
SLPS457 – NOVEMBER 2013
Dual 20 V N-Channel NexFET™ Power MOSFETs
.
1
FEATURES
PRODUCT SUMMARY
Common Source Connection
TA = 25°C
TYPICAL VALUE
UNIT
Low Drain to Drain On-Resistance
VDS
Drain to Source Voltage
20
V
Space Saving SON 3.3 x 3.3 mm Plastic
Qg
Gate Charge Total (4.5 V)
11.7
nC
Package
Qgd
Gate Charge Gate to Drain
1.6
nC
VGS = 4.5 V
11.7
m
Optimized for 5 V Gate Drive
Drain to Drain On Resistance
RDD(on)
(Q1 + Q2)
VGS = 8 V
10.3
m
Low Thermal Resistance
VGS(th)
Threshold Voltage
1.1
V
Avalanche Rated
Pb-Free Terminal Plating
ORDERING INFORMATION
RoHS Compliant
Device
Package
Media
Qty
Ship
Halogen Free
SON 3.3 x 3.3 mm
13 Inch
Tape and
CSD85312Q3E
2500
Plastic Package
Reel
Reel
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
Adaptor or USB Input Protection for Notebook
TA = 25°C
VALUE
UNIT
PCs and Tablets
VDS
Drain to Source Voltage
20
V
VGS
Gate to Source Voltage
+10/–8
V
DESCRIPTION
Continuous Drain Current (Package Limited)
39
A
ID
The CSD85312Q3E is a 20 V common-source, dual
Continuous Drain Current (1)
12
A
N-channel device designed for adaptor or USB input
IDM
Pulsed Drain Current (2)
76
A
protection. This SON 3.3 x 3.3 mm device has low
PD
Power Dissipation
2.5
W
drain to drain on-resistance that minimizes losses and
TJ,
Operating Junction and Storage Temperature
–55 to
offers low component count for space constrained
°C
TSTG
Range
150
multi-cell battery charging applications.
Avalanche Energy, Single Pulse
EAS
72
mJ
ID = 38 A, L = 0.1 mH, RG = 25 Ω
Top View
(1) Typical RθJA =63°C/W on 1 inch
2 (2 oz.) on 0.060 inch thick
FR4PCB
(2) Pulse duration
≤ 300 μs, duty cycle ≤ 2%
TEXT ADDED FOR SPACING
VGS vs. RDD(on)
Circuit Image
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Copyright © 2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.


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