Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

2SC2710-Y Fiches technique(PDF) 1 Page - Toshiba Semiconductor

No de pièce 2SC2710-Y
Description  TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
Download  3 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC2710-Y Fiches technique(HTML) 1 Page - Toshiba Semiconductor

  2SC2710-Y Datasheet HTML 1Page - Toshiba Semiconductor 2SC2710-Y Datasheet HTML 2Page - Toshiba Semiconductor 2SC2710-Y Datasheet HTML 3Page - Toshiba Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 1 / 3 page
background image
2SC2710
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2710
For Audio Amplifier Applications
• High DC current gain: hFE (1) = 100~320
• Complementary to 2SA1150
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
35
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
800
mA
Base current
IB
160
mA
Collector power dissipation
PC
300
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 35 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
30
V
hFE (1)
(Note)
VCE = 1 V, IC = 100 mA
100
320
DC current gain
hFE (2)
VCE = 1 V, IC = 700 mA
35
Collector-emitter saturation voltage
VCE (sat)
IC = 500 mA, IB = 20 mA
0.5
V
Base-emitter voltage
VBE
VCE = 1 V, IC = 10 mA
0.5
0.8
V
Transition frequency
fT
VCE = 5 V, IC = 10 mA
120
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
13
pF
Note: hFE (1) classification O: 100~200, Y: 160~320
Unit: mm
JEDEC
JEITA
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.)


Numéro de pièce similaire - 2SC2710-Y

FabricantNo de pièceFiches techniqueDescription
logo
Toshiba Semiconductor
2SC2710 TOSHIBA-2SC2710 Datasheet
135Kb / 2P
   TRANSISTOR (FOR AUDIO AMPLIFIER APPLICATIONS)
2SC2710 TOSHIBA-2SC2710 Datasheet
116Kb / 3P
   For Audio Amplifier Applications
2SC2710 TOSHIBA-2SC2710 Datasheet
134Kb / 1P
   MINI PACKAGE SERIES
2SC2710 TOSHIBA-2SC2710_03 Datasheet
116Kb / 3P
   For Audio Amplifier Applications
More results

Description similaire - 2SC2710-Y

FabricantNo de pièceFiches techniqueDescription
logo
Toshiba Semiconductor
RN4605 TOSHIBA-RN4605 Datasheet
163Kb / 5P
   TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
RN4607 TOSHIBA-RN4607 Datasheet
161Kb / 5P
   TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
RN4602 TOSHIBA-RN4602 Datasheet
329Kb / 5P
   TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
RN4603 TOSHIBA-RN4603 Datasheet
166Kb / 5P
   TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
RN4608 TOSHIBA-RN4608 Datasheet
157Kb / 5P
   TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
RN4911 TOSHIBA-RN4911 Datasheet
177Kb / 6P
   TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
RN4905 TOSHIBA-RN4905 Datasheet
162Kb / 5P
   TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
RN6001 TOSHIBA-RN6001 Datasheet
90Kb / 3P
   TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC1815L-GR TOSHIBA-2SC1815L-GR Datasheet
256Kb / 4P
   TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SD2655 TOSHIBA-2SD2655 Datasheet
70Kb / 2P
   TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
TPCP8505 TOSHIBA-TPCP8505 Datasheet
205Kb / 5P
   TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process
More results


Html Pages

1 2 3


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com