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STB16NS25 Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce STB16NS25
Description  N-CHANNEL 250V - 0.23W - 16A D2PAK MESH OVERLAY??MOSFET
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB16NS25 Fiches technique(HTML) 3 Page - STMicroelectronics

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STB16NS25
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD =125 V, ID =8 A
RG = 4.7Ω VGS =10 V
(see test circuit, Figure 3)
15
ns
tr
Rise Time
25
ns
Qg
Total Gate Charge
VDD =200V, ID =16 A,
VGS =10V
60
80
nC
Qgs
Gate-Source Charge
8
nC
Qgd
Gate-Drain Charge
22
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off- Delay Time
Fall Time
VDD = 125V, ID =8 A,
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 3)
75
35
ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp = 200V, ID =16A,
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 5)
25
30
55
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
16
A
ISDM (2)
Source-drain Current (pulsed)
64
A
VSD (1)
Forward On Voltage
ISD =16A,VGS =0
1.5
V
trr
Reverse Recovery Time
ISD = 16 A, di/dt = 100A/µs
VDD =33V, Tj = 150°C
(see test circuit, Figure 5)
270
ns
Qrr
Reverse Recovery Charge
1.5
µC
IRRM
Reverse Recovery Current
11.5
A
Thermal Impedance
Safe Operating Area


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