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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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IRF3415STRLPBF Fiches technique(PDF) 1 Page - International Rectifier |
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IRF3415STRLPBF Fiches technique(HTML) 1 Page - International Rectifier |
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1 / 11 page  IRF3415S/L HEXFET® Power MOSFET PD - 91509C l Advanced Process Technology l Surface Mount (IRF3415S) l Low-profile through-hole (IRF3415L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated 5/13/98 Absolute Maximum Ratings Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF3415L) is available for low- profile applications. Description VDSS = 150V RDS(on) = 0.042Ω ID = 43A 2 D P ak TO-26 2 S D G Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.75 RθJA Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40 Thermal Resistance °C/W Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
43 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
30 A IDM Pulsed Drain Current
150 PD @TA = 25°C Power Dissipation 3.8 W PD @TC = 25°C Power Dissipation 200 W Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy
590 mJ IAR Avalanche Current 22 A EAR Repetitive Avalanche Energy 20 mJ dv/dt Peak Diode Recovery dv/dt
5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C |
Numéro de pièce similaire - IRF3415STRLPBF |
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Description similaire - IRF3415STRLPBF |
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