BCX53 datasheet(4/22 Pages) NXP

No de pièce	BCX53

Description	80 V, 1 A PNP medium power transistors

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BCP53_BCX53_BC53PA

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Product data sheet

Rev. 9 — 19 October 2011

4 of 22

NXP Semiconductors

BCP53; BCX53; BC53PA

80 V, 1 A PNP medium power transistors

5.

Limiting values

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

[3]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.

[4]

Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.

[5]

Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2.

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

-

100

V

VCEO

collector-emitter voltage

open base

-

80

V

VEBO

emitter-base voltage

open collector

-

5V

IC

collector current

-

1A

ICM

peak collector current

single pulse;

tp  1ms

-

2A

IB

base current

-

0.3

A

IBM

peak base current

single pulse;

tp  1ms

-

0.3

A

Ptot

total power dissipation

Tamb  25 C

BCP53

[1] -0.65

W

[2] -1.00

W

[3] -1.35

W

BCX53

[1] -0.50

W

[2] -0.95

W

[3] -1.35

W

BC53PA

[1] -0.42

W

[2] -0.83

W

[3] -1.10

W

[4] -0.81

W

[5] -1.65

W

Tj

junction temperature

-

150

C

Tamb

ambient temperature

55

+150

C

Tstg

storage temperature

65

+150

C

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