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BAW56W Fiches technique(PDF) 5 Page - NXP Semiconductors

No de pièce BAW56W
Description  High-speed switching diodes
Download  15 Pages
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Fabricant  NXP [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo NXP - NXP Semiconductors

BAW56W Fiches technique(HTML) 5 Page - NXP Semiconductors

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BAV756S_BAW56_SER_5
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 05 — 26 November 2007
5 of 15
NXP Semiconductors
BAV756S; BAW56 series
High-speed switching diodes
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Reflow soldering is the only recommended soldering method.
7.
Characteristics
[1]
Pulse test: tp ≤ 300 µs; δ≤ 0.02.
[2]
When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
[3]
When switched from IF = 10 mA; tr =20ns.
Rth(j-sp)
thermal resistance from
junction to solder point
BAV756S
-
-
255
K/W
BAW56
-
-
360
K/W
BAW56S
-
-
255
K/W
BAW56T
-
-
350
K/W
BAW56W
-
-
300
K/W
Table 7.
Thermal characteristics …continued
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Table 8.
Characteristics
Tamb =25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per diode
VF
forward voltage
[1]
IF = 1 mA
-
-
715
mV
IF = 10 mA
-
-
855
mV
IF = 50 mA
--1
V
IF = 150 mA
-
-
1.25
V
IR
reverse current
VR = 25 V
--30
nA
VR = 80 V
-
-
0.5
µA
VR =25V; Tj = 150 °C
--30
µA
VR =80V; Tj = 150 °C
-
-
150
µA
Cd
diode capacitance
VR = 0 V; f = 1 MHz
-
-
2
pF
trr
reverse recovery time
[2] --4
ns
VFR
forward recovery voltage
[3] -
-
1.75
V


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