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STFI11NM65N Fiches technique(PDF) 4 Page - STMicroelectronics

No de pièce STFI11NM65N
Description  N-channel 650 V, 0.425 ohm typ., 11 A MDmesh ll Power MOSFET
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
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STFI11NM65N Fiches technique(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N
4/21
Doc ID 13476 Rev 4
2
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 4. On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
breakdown voltage
I
D
= 1 mA, V
GS
= 0
650
V
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
V
DS
= 650 V
V
DS
= 650 V, T
C
=125 °C
1
100
μA
μA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 25 V
± 100
nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 μA
234
V
R
DS(on)
Static drain-source on-
resistance
V
GS
= 10 V, I
D
= 5.5 A
0.425
0.455
Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
C
iss
Input capacitance
V
DS
= 50 V, f = 1 MHz,
V
GS
= 0
-800
-
pF
pF
pF
C
oss
Output capacitance
-
50
-
pF
C
rss
Reverse transfer
capacitance
-2.9
-
pF
C
oss eq.
(1)
1.
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
Equivalent output
capacitance
V
DS
= 0 to 520 V, V
GS
= 0
-
133
-
pF
R
G
Intrinsic gate
resistance
f = 1 MHz open drain
-
4.2
-
Ω
Q
g
Total gate charge
V
DD
= 520 V, I
D
= 11 A,
V
GS
= 10 V
(see
Figure 19)
-29
-
nC
Q
gs
Gate-source charge
-
3.9
-
nC
Q
gd
Gate-drain charge
-
16
-
nC


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