BC337-40 datasheet(1/1 Pages) WINNERJOIN

No de pièce	BC337-40

Description	TRANSISTOR (NPN)

Download	1 Pages

Scroll/Zoom	100%

Fabricant	WINNERJOIN [SHENZHEN YONGERJIA INDUSTRY CO.,LTD]

Site Internet	http://www.wej.cn

Logo

1 / 1 page

WEJ

ELECTRONIC

CO.,LTD

BC337,-16,-25,-40

TRANSISTOR (NPN)

BC338, -16,-25,-40

FEATURES

Power dissipation

PCM:

0.625

W (Tamb=25

℃)

Collector current

ICM:

0.8

A

Collector-base voltage

VCBO:

BC337

50

V

BC338

30

V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL

CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

BC337

BC338

VCBO

Ic= 100µA, IE=0

50

30

V

Collector-emitter breakdown voltage

BC337

BC338

VCEO

IC= 10 mA , IB=0

45

25

V

Emitter-base breakdown voltage

VEBO

IE= 10µA, IC=0

5

V

Collector cut-off current

BC337

BC338

ICBO

VCB= 45 V, IE=0

VCB= 25V, IE=0

0.1

µA

Collector cut-off current

BC337

BC338

ICEO

VCE= 40 V, IB=0

VCE= 20 V, IB=0

0.2

µA

Emitter cut-off current

IEBO

VEB= 4 V, IC=0

0.1

µA

hFE(1)

VCE=1V, IC= 100mA

100

160

250

630

250

400

630

DC current gain

BC337/BC338

BC337-16/BC338-16

BC337-25/BC338-25

BC337-40/BC338-40

HFE(2)

VCE=1V, IC= 300mA

60

Collector-emitter saturation voltage

VCE(sat)

IC=500 mA, IB= 50 mA

0.7

V

Base-emitter saturation voltage

VBE(sat)

IC= 500 mA, IB=50 mA

1.2

V

Transition frequency

f T

VCE= 5V, IC= 10mA

f = 100MHz

210

MHz

1 2 3

TO-92

1. COLLECTOR

2. BASE

3. EMITTER

BC337/338

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

RoHS

Numéro de pièce similaire - BC337-40

Fabricant	No de pièce	Fiches technique	Description
Motorola, Inc	BC337-40	163Kb / 4P	Amplifier Transistor
Taiwan Semiconductor Co...	BC337-40	275Kb / 5P	NPN Transistor
NXP Semiconductors	BC337-40	47Kb / 8P	NPN general purpose transistor 1999 Apr 15
Micro Commercial Compon...	BC337-40	375Kb / 4P	NPN Plastic-Encapsulate Transistors
Siemens Semiconductor G...	BC337-40	150Kb / 6P	NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage)

More results

Description similaire - BC337-40

Fabricant	No de pièce	Fiches technique	Description
Unisonic Technologies	DTC114T	194Kb / 3P	NPN DIGITAL TRANSISTOR NPN DIGITAL TRANSISTOR
Shenzhen Jin Yu Semicon...	2SC4944	850Kb / 1P	DUAL TRANSISTOR (NPN NPN)
Jiangsu Changjiang Elec...	IMX2	5Mb / 4P	DUAL TRANSISTOR (NPNNPN)
Jiangsu Changjiang Elec...	UMX2N	1Mb / 3P	DUAL TRANSISTOR (NPNNPN)
Rectron Semiconductor	MMDT3904	263Kb / 5P	DUAL TRANSISTOR (NPNNPN)
Jiangsu Changjiang Elec...	MMDT3904	1Mb / 4P	DUAL TRANSISTOR (NPNNPN)
	EMX1	3Mb / 4P	DUAL TRANSISTOR(NPNNPN)
	BC847BV	3Mb / 3P	DUAL TRANSISTOR(NPN NPN)
	EMX18	776Kb / 3P	DUAL TRANSISTOR(NPNNPN)
	UMX3N	3Mb / 4P	DUAL TRANSISTOR (NPNNPN)
	UMX18N	1Mb / 3P	DUAL TRANSISTOR (NPNNPN)

More results

BC337-40 Fiches technique(PDF) 1 Page - SHENZHEN YONGERJIA INDUSTRY CO.,LTD

BC337-40 Fiches technique(HTML) 1 Page - SHENZHEN YONGERJIA INDUSTRY CO.,LTD

Numéro de pièce similaire - BC337-40

Description similaire - BC337-40

Html Pages

1

Fiches technique Télécharger

Lien URL