Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

AM29F040-70JIB Fiches technique(PDF) 10 Page - Advanced Micro Devices

No de pièce AM29F040-70JIB
Description  4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
Download  33 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  AMD [Advanced Micro Devices]
Site Internet  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29F040-70JIB Fiches technique(HTML) 10 Page - Advanced Micro Devices

Back Button AM29F040-70JIB Datasheet HTML 6Page - Advanced Micro Devices AM29F040-70JIB Datasheet HTML 7Page - Advanced Micro Devices AM29F040-70JIB Datasheet HTML 8Page - Advanced Micro Devices AM29F040-70JIB Datasheet HTML 9Page - Advanced Micro Devices AM29F040-70JIB Datasheet HTML 10Page - Advanced Micro Devices AM29F040-70JIB Datasheet HTML 11Page - Advanced Micro Devices AM29F040-70JIB Datasheet HTML 12Page - Advanced Micro Devices AM29F040-70JIB Datasheet HTML 13Page - Advanced Micro Devices AM29F040-70JIB Datasheet HTML 14Page - Advanced Micro Devices Next Button
Zoom Inzoom in Zoom Outzoom out
 10 / 33 page
background image
10
Am29F040
rising edge of CE or WE (whichever happens first)
begins programming. Upon executing the Embedded
Program Algorithm command sequence the system is
not required to provide further controls or timings. The
device will automatically provide adequate internally
generated program pulses and verify the programmed
cell margin.
The automatic programming operation is completed
when the data on DQ7 is equivalent to data written to
this bit (see Write Operation Status section) at which
time the device returns to the read mode and ad-
dresses are no longer latched. Therefore, the device
requires that a valid address to the device be supplied
by the system at this particular instance of time. Hence,
Data Polling must be performed at the memory location
which is being programmed.
Any commands written to the chip during this period
will be ignored.
Programming is allowed in any sequence and across
sector boundaries. Beware that a data “0” cannot be
programmed back to a “1”. Attempting to do so may
cause the device to exceed programming time limits
(DQ5 = 1) or result in an apparent success, according
to the data polling algorithm, but a read from reset/read
mode will show that the data is still “0”. Only erase
operations can convert “0”s to “1”s.
Figure 1 illustrates the Embedded Programming Algorithm
using typical command strings and bus operations.
Chip Erase
Chip erase is a six bus cycle operation. There are two
“unlock” write cycles. These are followed by writing the
“setup” command. Two more “unlock” write cycles are
then followed by the chip erase command.
Chip erase does
not require the user to program the
device prior to erase. Upon executing the Embedded
Erase Algorithm command sequence the device auto-
matically will program and verify the entire memory for
an all zero data pattern prior to electrical erase. The
chip erase is performed sequentially one sector at a
time. The system is not required to provide any controls
or timings during these operations.
The automatic erase begins on the rising edge of the
last WE pulse in the command sequence and termi-
nates when the data on DQ7 is “1” (see Write Operation
Status section) at which time the device returns to read
the mode.
Figure 2 illustrates the Embedded Erase Algorithm
using typical command strings and bus operations.
Sector Erase
Sector erase is a six bus cycle operation. There are two
“unlock” write cycles. These are followed by writing the
“setup” command. Two more “unlock” write cycles are
then followed by the sector erase command. The sector
address (any address location within the desired sector)
is latched on the falling edge of WE, while the command
(data) is latched on the rising edge of WE. A time-out
of 80
µs from the rising edge of the last sector erase
command will initiate the sector erase command(s).
Multiple sectors may be erased concurrently by writing
the six bus cycle operations as described above. This
sequence is followed with writes of the Sector Erase
command to addresses in other sectors desired to be
concurrently erased. The time between writes must be
less than 80
µs, otherwise that command will not be ac-
cepted. It is recommended that processor interrupts be
disabled during this time to guarantee this condition.
The interrupts can be re-enabled after the last Sector
Erase command is written. A time-out of 80
µs from the
rising edge of the last WE will initiate the execution of
the Sector Erase command(s). If another falling edge of
the WE occurs within the 80
µs time-out window the
timer is reset. (Monitor DQ3 to determine if the sector
erase window is still open, see section DQ3, Sector
Erase Timer.) Any command other than Sector Erase
or Erase Suspend during this period resets the device
to read mode, ignoring the previous command string. In
that case, restart the erase on those sectors and allow
them to complete. (Refer to the Write Operation Status
section for Sector Erase Timer operation.) Loading the
sector erase buffer may be done in any sequence and
with any number of sectors (1 to 8).
Sector erase does
not require the user to program the
device prior to erase. The device automatically
programs all memory locations in the sector(s) to be
erased prior to electrical erase. When erasing a sector
or sectors the remaining unselected sectors are not
affected. The system is
not required to provide any
controls or timings during these operations.
The automatic sector erase begins after the 80
µs time
out from the rising edge of the WE pulse for the last
sector erase command pulse and terminates when the
data on DQ7 is “1" (see Write Operation Status section)
at which time the device returns to read mode.
During
the execution of the Sector Erase command, only the
Erase Suspend and Erase Resume commands are
allowed. All other commands will be ignored. Data poll-
ing must be performed at an address within any of the
sectors being erased.
Figure 2 illustrates the Embedded Erase Algorithm
using typical command strings and bus operations.


Numéro de pièce similaire - AM29F040-70JIB

FabricantNo de pièceFiches techniqueDescription
logo
Advanced Micro Devices
AM29F040B AMD-AM29F040B Datasheet
394Kb / 30P
   4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F040B AMD-AM29F040B Datasheet
981Kb / 36P
   4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
logo
SPANSION
AM29F040B-09 SPANSION-AM29F040B-09 Datasheet
918Kb / 36P
   4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
logo
Advanced Micro Devices
AM29F040B-1 AMD-AM29F040B-1 Datasheet
790Kb / 35P
   4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F040B-120EC AMD-AM29F040B-120EC Datasheet
790Kb / 35P
   4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
More results

Description similaire - AM29F040-70JIB

FabricantNo de pièceFiches techniqueDescription
logo
Advanced Micro Devices
AM29F400AT AMD-AM29F400AT Datasheet
136Kb / 35P
   4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F800T AMD-AM29F800T Datasheet
250Kb / 41P
   8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
AM29F016 AMD-AM29F016 Datasheet
219Kb / 36P
   16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
logo
Hynix Semiconductor
HY29F040A HYNIX-HY29F040A Datasheet
282Kb / 40P
   512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory
logo
Advanced Micro Devices
AM29LV081B AMD-AM29LV081B Datasheet
39Kb / 6P
   8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory
AM29F040B AMD-AM29F040B Datasheet
394Kb / 30P
   4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F004B AMD-AM29F004B Datasheet
993Kb / 37P
   4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
logo
SPANSION
AM29F040B-09 SPANSION-AM29F040B-09 Datasheet
918Kb / 36P
   4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F032B SPANSION-AM29F032B_09 Datasheet
803Kb / 40P
   32 Megabit (4 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F004B SPANSION-AM29F004B_06 Datasheet
944Kb / 37P
   4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com