STP18NM60ND datasheet(1/22 Pages) STMICROELECTRONICS

No de pièce	STP18NM60ND

Description	N-channel 600 V - 0.25 typ., 13 A FDmesh II Power MOSFET (with fast diode) in D2PAK

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This is information on a product in full production.

May 2013

DocID024653 Rev 1

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STB18NM60ND, STF18NM60ND,

STP18NM60ND, STW18NM60ND

N-channel 600 V - 0.25

Ω typ., 13 A FDmesh™ II Power MOSFET

(with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247 packages

Datasheet

− production data

Figure 1. Internal schematic diagram

Features

• The worldwide best RDS(on)* area amongst the

fast recovery diode devices

• 100% avalanche tested

• Low input capacitance and gate charge

• Low gate input resistance

• Extremely high dv/dt and avalanche

capabilities

Applications

• Switching applications

Description

These FDmesh™ II Power MOSFETs with

intrinsic fast-recovery body diode are produced

using the second generation of MDmesh™

technology. Utilizing a new strip-layout vertical

structure, these revolutionary devices feature

extremely low on-resistance and superior

switching performance. They are ideal for bridge

topologies and ZVS phase-shift converters.

TO-220

TO-220FP

TO-247

D2PAK

1

3

TAB

1

2

3

1

2

3

TAB

1

2

3

Order codes

VDSS @

TJmax

RDS(on)

max

ID

STB18NM60ND

650 V

<0.29

Ω

13 A

STF18NM60ND

STP18NM60ND

STW18NM60ND

Table 1. Device summary

Order codes

Marking

Package

Packaging

STB18NM60ND

18NM60ND

D2PAK

Tape and reel

STF18NM60ND

TO-220FP

Tube

STP18NM60ND

TO-220

STW18NM60ND

TO-247

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