STF24N60M2 datasheet(5/14 Pages) STMICROELECTRONICS

No de pièce	STF24N60M2

Description	N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in TO-220FP and I2PAKFP packages

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DocID024026 Rev 4

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STF24N60M2, STFI24N60M2

Electrical characteristics

Table 7. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

td(on)

Turn-on delay time

VDD = 300 V, ID = 9 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 14 and 19)

-14

-

ns

tr

Rise time

-

9

-

ns

td(off)

Turn-off delay time

-

60

-

ns

tf

Fall time

-

15

-

ns

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

ISD

(1)

1.

The value is rated according to Rthj-case and limited by package.

Source-drain current

-

18

A

ISDM

(1),(2)

2.

Pulse width limited by safe operating area

Source-drain current (pulsed)

-

72

A

VSD

(3)

3.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 18 A, VGS = 0

-

1.6

V

trr

Reverse recovery time

ISD = 18 A, di/dt = 100 A/µs

VDD = 60 V (see Figure 16)

-332

ns

Qrr

Reverse recovery charge

-

4

µC

IRRM

Reverse recovery current

-

24

A

trr

Reverse recovery time

ISD = 18 A, di/dt = 100 A/µs

VDD = 60 V, Tj = 150 °C

(see Figure 16)

-450

ns

Qrr

Reverse recovery charge

-

5.5

µC

IRRM

Reverse recovery current

-

25

A

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