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STGB20H60DF Fiches technique(PDF) 9 Page - STMicroelectronics |
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STGB20H60DF Fiches technique(HTML) 9 Page - STMicroelectronics |
9 / 22 page DocID023740 Rev 4 9/22 STGB20H60DF, STGF20H60DF, STGP20H60DF Electrical characteristics Figure 12. VCE(sat) vs. junction temperature Figure 13. VCE(sat) vs. collector current Figure 14. Forward bias safe operating area for D2PAK and TO-220 Figure 15. Thermal impedance for D2PAK and TO-220 Figure 16. Forward bias safe operating area for TO-220FP Figure 17. Thermal impedance for TO-220FP VCE(sat) 1.9 1.7 1.5 1.3 -75 25 TJ(°C) 125 (V) -25 75 2.1 2.3 IC= 40 A VGE= 15 V IC= 20 A IC= 10 A AM16290V1 VCE(sat) 2.2 1.8 1.4 1.0 020 IC(A) (V) 10 30 VGE= 15 V TJ = 175 °C TJ = -40 °C TJ = 25 °C AM16291V1 (single pulse TC=25°C, TJ<=175°C; VGE=15V) IC 10 1 0.1 1 100 VCE(V) (A) 10 1 ms 100 µs AM16280V1 10 -5 10 -4 10 -3 10 -2 10 -1 tp(s) 10 -2 10 -1 K 0.2 0.05 0.02 0.01 0.1 Zth=k Rthj-c δ=tp/τ tp τ Single pulse δ=0.5 ZthTO2T_B IC 10 1 0.1 1 100 VCE(V) (A) 10 1 ms 100 µs 1 µs (single pulse TC=25°C, TJ<=175°C; VGE=15V) AM16283V1 Zth=k Rthj-c δ=tp/τ tp τ 10 -5 10 -4 10 -3 10 -2 10 -1 tp(s) 10 -3 10 -1 K 0.2 0.05 0.02 0.01 0.1 Single pulse δ=0.5 ZthTOF2T_B 10 -2 10 |
Numéro de pièce similaire - STGB20H60DF |
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Description similaire - STGB20H60DF |
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