STGW60V60DF datasheet(3/16 Pages) STMICROELECTRONICS

No de pièce	STGW60V60DF

Description	Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

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DocID024154 Rev 6

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STGW60V60DF, STGWT60V60DF

Electrical characteristics

2

Electrical characteristics

T

J

= 25 °C unless otherwise specified.

Table 4. Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V

(BR)CES

Collector-emitter

breakdown voltage

(V

GE

= 0)

I

C

= 2 mA

600

V

CE(sat)

Collector-emitter saturation

voltage

V

GE

= 15 V, I

C

= 60 A

1.85

2.3

V

GE

= 15 V, I

C

= 60 A

T

J

= 125 °C

2.15

V

GE

= 15 V, I

C

= 60 A

T

J

= 175 °C

2.35

V

F

Forward on-voltage

I

F

= 60 A

2

2.6

V

I

F

= 60 A T

J

= 125 °C

1.7

V

I

F

= 60 A T

J

= 175 °C

1.6

V

GE(th)

Gate threshold voltage

V

CE

= V

GE

, I

C

= 1 mA

5

6

7

V

I

CES

Collector cut-off current

(V

GE

= 0)

V

CE

= 600 V

25

μA

I

GES

Gate-emitter leakage

current (V

CE

= 0)

V

GE

= ± 20 V

250

nA

Table 5. Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

C

ies

Input capacitance

V

CE

= 25 V, f = 1 MHz,

V

GE

= 0

-8000

-

pF

C

oes

Output capacitance

-

280

-

pF

C

res

Reverse transfer

capacitance

-170

-

pF

Q

g

Total gate charge

V

CC

= 480 V, I

C

= 60 A,

V

GE

= 15 V, see

Figure 29

-334

-

nC

Q

ge

Gate-emitter charge

-

130

-

nC

Q

gc

Gate-collector charge

-

58

-

nC

Numéro de pièce similaire - STGW60V60DF

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	STGW60V60DF	1Mb / 20P	Trench gate field-stop IGBT, V series 600 V, 60 A very high speed September 2016
STMicroelectronics	STGW60V60DF	1Mb / 20P	Trench gate field-stop IGBT, V series 600 V, 60 A very high speed September 2016

More results

Description similaire - STGW60V60DF

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	STGW60V60DF	1Mb / 20P	Trench gate field-stop IGBT, V series 600 V, 60 A very high speed September 2016
	STGFW20V60DF	709Kb / 15P	Trench gate field-stop IGBT, V series 600 V, 20 A very high speed February 2017 Rev 2
	STGB40V60F	1Mb / 24P	Trench gate field-stop IGBT, V series 600 V, 40 A very high speed April 2014 Rev 2
	STGW40V60DLF	1Mb / 17P	Trench gate field-stop IGBT, V series 600 V, 40 A very high speed October 2013 Rev 4
	STGFW30V60F	1Mb / 19P	Trench gate field-stop IGBT, V series 600 V, 30 A very high speed April 2014 Rev 4
	STGFW40V60DF	1Mb / 21P	Trench gate field-stop IGBT, V series 600 V, 40 A very high speed April 2014 Rev 8
	STGFW80V60F	1Mb / 19P	Trench gate field-stop IGBT, V series 600 V, 80 A very high speed May 2014 Rev 1
	STGFW30V60DF	1Mb / 15P	Trench gate field-stop IGBT, V series 600 V, 30 A very high speed March 2014 Rev 1
	STGFW20V60F	1Mb / 19P	600 V, 20 A very high speed trench gate field-stop IGBT July 2013 Rev 1
	STGB20V60F	1Mb / 18P	600 V, 20 A very high speed trench gate field-stop IGBT July 2013 Rev 1

More results

STGW60V60DF Fiches technique(PDF) 3 Page - STMicroelectronics

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Numéro de pièce similaire - STGW60V60DF

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