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IRF8852PBF Fiches technique(PDF) 1 Page - International Rectifier

No de pièce IRF8852PBF
Description   Ultra Low On-Resistance
Download  10 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRF8852PBF Fiches technique(HTML) 1 Page - International Rectifier

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www.irf.com
1
07/30/09
IRF8852PbF
HEXFET® Power MOSFET
Notes
 through … are on page 10
PD - 96246
TSSOP-8
Description
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.1mm)
l Available in Tape & Reel
l Lead-Free
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that
International Rectifier is well known for,
provides the
designer with an extremely efficient and reliable
device for battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space is
at a premium. The low profile (<1.2mm) allows it to fit easily
into extremely thin environments such as portable
electronics and PCMCIA cards.
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VDSS
RDS(on) max
Id
11.3m:@VGS = 10V
7.8A
15.4m:@VGS = 4.5V
6.2A
25V
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
c
PD @TA = 25°C
Power Dissipation
f
PD @TA = 70°C
Power Dissipation
f
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
TJ
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJL
Junction-to-Drain Lead
g
–––
53
RθJA
Junction-to-Ambient
f
–––
125
°C/W
W
°C
A
-55 to + 150
1.0
0.01
0.64
± 20
Max.
7.8
6.2
62.4
25


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