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IRF8852PBF Fiches technique(PDF) 1 Page - International Rectifier |
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IRF8852PBF Fiches technique(HTML) 1 Page - International Rectifier |
1 / 10 page www.irf.com 1 07/30/09 IRF8852PbF HEXFET® Power MOSFET Notes through
are on page 10 PD - 96246 TSSOP-8 Description l Ultra Low On-Resistance l Dual N-Channel MOSFET l Very Small SOIC Package l Low Profile (< 1.1mm) l Available in Tape & Reel l Lead-Free HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device for battery and load management. The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards. # " ! Ã2Ã9 !Ã2ÃT "Ã2ÃT #Ã2ÃB 'Ã2Ã9! &Ã2ÃT! %Ã2ÃT! $Ã2ÃB! $ % & ' VDSS RDS(on) max Id 11.3m:@VGS = 10V 7.8A 15.4m:@VGS = 4.5V 6.2A 25V ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current c PD @TA = 25°C Power Dissipation f PD @TA = 70°C Power Dissipation f Linear Derating Factor W/°C VGS Gate-to-Source Voltage V TJ Operating Junction and TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJL Junction-to-Drain Lead g ––– 53 RθJA Junction-to-Ambient f ––– 125 °C/W W °C A -55 to + 150 1.0 0.01 0.64 ± 20 Max. 7.8 6.2 62.4 25 |
Numéro de pièce similaire - IRF8852PBF |
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