IRF7842TRPBF datasheet(1/9 Pages) IRF

No de pièce	IRF7842TRPBF

Description	Synchronous MOSFET for Notebook Processor Power

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Fabricant	IRF [International Rectifier]

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4/26/04

www.irf.com

1

IRF7842

HEXFET® Power MOSFET

Notes

through are on page 9

Top View

8

1

2

3

4

5

6

7

D

G

S

A

S

A

SO-8

PD - 95864

Benefits

l Very Low RDS(on) at 4.5V VGS

l Low Gate Charge

l Fully Characterized Avalanche Voltage

and Current

Applications

l Synchronous MOSFET for Notebook

Processor Power

l Secondary Synchronous Rectification

for Isolated DC-DC Converters

l Synchronous Fet for Non-Isolated

DC-DC Converters

VDSS

RDS(on) max

Qg (typ.)

40V 5.0m

:@V

GS = 10V

33nC

Absolute Maximum Ratings

Parameter

Units

VDS

Drain-to-Source Voltage

V

VGS

Gate-to-Source Voltage

ID @ TA = 25°C

Continuous Drain Current, VGS @ 10V

ID @ TA = 70°C

Continuous Drain Current, VGS @ 10V

A

IDM

Pulsed Drain Current

c

PD @TA = 25°C

Power Dissipation

f

W

PD @TA = 70°C

Power Dissipation

f

Linear Derating Factor

W/°C

TJ

Operating Junction and

°C

TSTG

Storage Temperature Range

Thermal Resistance

Parameter

Typ.

Max.

Units

RθJL

Junction-to-Drain Lead

g

–––

20

°C/W

RθJA

Junction-to-Ambient

fg

–––

50

-55 to + 150

2.5

0.02

1.6

Max.

18

14

140

± 20

40

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