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BUF602 Fiches technique(PDF) 4 Page - Texas Instruments |
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BUF602 Fiches technique(HTML) 4 Page - Texas Instruments |
4 / 27 page ELECTRICAL CHARACTERISTICS: VS = +5V BUF602 SBOS339B – OCTOBER 2005 – REVISED MAY 2008 ...................................................................................................................................................... www.ti.com Boldface limits are tested at +25 °C. At RL = 100Ω to VS/2, unless otherwise noted. BUF602ID, IDBV TYP MIN/MAX OVER TEMPERATURE 0 °C to –40 °C to MIN/ PARAMETER CONDITIONS +25 °C +25 °C(2) 70 °C(3) +85 °C(3) UNITS MAX TEST LEVEL (1) AC PERFORMANCE (See figure 31) Bandwidth VO = 500mVPP 780 400 400 390 MHz min B VO = 1VPP 700 MHz typ C Full-Power Bandwidth VO = 3VPP 420 MHz typ C Bandwidth for 0.1dB Flatness VO = 500mVPP 130 MHz typ C Slew Rate VO = 3V Step 2500 1800 1600 1400 V/ µs min B Rise Time and Fall Time VO = 0.2V Step 450 875 875 900 ps max B Settling Time to 0.05% VO = 1V Step 6 ns typ C Harmonic Distortion VO = 2VPP, 5MHz 2nd-Harmonic RL = 100Ω –50 –45 –44 –43 dBc max B RL = 500Ω –73 –62 –61 –60 dBc max B 3rd-Harmonic RL = 100Ω –70 –64 –64 –63 dBc max B RL = 500Ω –73 –72 –72 –71 dBc max B Input Voltage Noise f > 100kHz 4.9 5.2 5.7 6.1 nV/ √Hz max B Input Current Noise f > 100kHz 2.2 2.7 2.8 2.9 pA/ √Hz max B Differential Gain NTSC, RL = 100Ω to VS/2 0.16 % typ C Differential Phase NTSC, RL = 100Ω to VS/2 0.05 ° typ C BUFFER DC PERFORMANCE (4) Maximum Gain RL = 500Ω 0.99 1 1 1 V/V max A Minimum Gain RL = 500Ω 0.99 0.98 0.98 0.98 V/V min A Input Offset Voltage ±16 ±30 ±36 ±38 mV max A Average Input Offset Voltage Drift ±125 ±125 µV/°C max B Input Bias Current ±3 ±7 ±8 ±8.5 µA max A Average Input Bias Current Drift ±20 ±20 nA/ °C max B BUFFER INPUT Input Impedance 1.0 || 2.1 M Ω || pF typ C BUFFER OUTPUT Most Positive Output Voltage RL = 100Ω +3.9 +3.7 +3.7 +3.7 V min B RL = 500Ω +4.1 +3.8 +3.8 +3.8 V min A Least Positive Output Voltage RL = 100Ω +1.1 +1.3 +1.3 +1.3 V max B RL = 500Ω +0.9 +1.2 +1.2 +1.2 V max A Output Current (Continuous) VO = 0V ±60 ±50 ±49 ±48 mA min A Peak Output Current VO = 0V ±160 mA typ C Closed-Loop Output Impedance f ≤ 10MHz 1.4 Ω typ C MID-POINT REFERENCE OUTPUT Maximum Mid-Supply Reference Voltage 2.5 2.6 2.6 2.6 V max A Minimum Mid-Supply Reference Voltage 2.5 2.4 2.4 2.4 V min A Mid-Supply Output Current, Sourcing 800 µA typ C Mid-Supply Output Current, Sinking 70 µA typ C Mid-Supply Output Impedance 200 Ω typ C (1) Test levels: (A) 100% tested at +25 °C. Over temperature limits set by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only for information. (2) Junction temperature = ambient for +25 °C specifications. (3) Junction temperature = ambient at low temperature limit; junction temperature = ambient +4 °C at high temperature limit for over temperature specifications. (4) Current is considered positive out of node. 4 Submit Documentation Feedback Copyright © 2005–2008, Texas Instruments Incorporated Product Folder Link(s): BUF602 |
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