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74AUP1G02GS Fiches technique(PDF) 4 Page - NXP Semiconductors |
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74AUP1G02GS Fiches technique(HTML) 4 Page - NXP Semiconductors |
4 / 21 page 74AUP1G02 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 6 — 27 June 2012 4 of 21 NXP Semiconductors 74AUP1G02 Low-power 2-input NOR gate 7. Functional description [1] H = HIGH voltage level; L = LOW voltage level. 8. Limiting values [1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] For TSSOP5 packages: above 87.5 °C the value of Ptot derates linearly with 4.0 mW/K. For XSON6 and X2SON5 packages: above 118 °C the value of Ptot derates linearly with 7.8 mW/K. 9. Recommended operating conditions Table 4. Function table[1] Input Output A B Y LL H LH L HL L HH L Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Max Unit VCC supply voltage −0.5 +4.6 V IIK input clamping current VI <0V −50 - mA VI input voltage [1] −0.5 +4.6 V IOK output clamping current VO >VCC or VO <0V - ±50 mA VO output voltage Active mode and Power-down mode [1] −0.5 +4.6 V IO output current VO =0 VtoVCC - ±20 mA ICC supply current - +50 mA IGND ground current −50 - mA Tstg storage temperature −65 +150 °C Ptot total power dissipation Tamb = −40 °C to +125 °C [2] -250 mW Table 6. Recommended operating conditions Symbol Parameter Conditions Min Max Unit VCC supply voltage 0.8 3.6 V VI input voltage 0 3.6 V VO output voltage Active mode 0 VCC V Power-down mode; VCC =0V 0 3.6 V Tamb ambient temperature −40 +125 °C Δt/ΔV input transition rise and fall rate VCC = 0.8 V to 3.6 V 0 200 ns/V |
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