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STF21N90K5 Fiches technique(PDF) 4 Page - STMicroelectronics |
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STF21N90K5 Fiches technique(HTML) 4 Page - STMicroelectronics |
4 / 22 page Electrical characteristics STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5 4/22 Doc ID 16744 Rev 6 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified). Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage (VGS= 0) ID = 1 mA 900 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 900 V VDS = 900 V, Tc=125 °C 1 50 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ± 20 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 3 45 V RDS(on) Static drain-source on resistance VGS = 10 V, ID= 9 A 0.25 0.299 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS =100 V, f=1 MHz, VGS=0 - 1645 - pF Coss Output capacitance 112 pF Crss Reverse transfer capacitance 2pF Co(tr) (1) 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Equivalent capacitance time related VGS = 0, VDS = 0 to 720 V -133 -pF Co(er) (2) 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS Equivalent capacitance energy related -16 - pF RG Intrinsic gate resistance f = 1MHz open drain - 4 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 720 V, ID = 18.5 A VGS =10 V (see Figure 20) - 43 12 25 - nC nC nC |
Numéro de pièce similaire - STF21N90K5 |
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Description similaire - STF21N90K5 |
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