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TPS1100PW Fiches technique(PDF) 5 Page - Texas Instruments |
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TPS1100PW Fiches technique(HTML) 5 Page - Texas Instruments |
5 / 14 page TPS1100, TPS1100Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS SLVS078C – DECEMBER 1993 – REVISED AUGUST 1995 5 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 PARAMETER MEASUREMENT INFORMATION Figure 1. Switching-Time Test Circuit RG RL VDD – + VGS DUT VDS Figure 2. Switching-Time Waveforms td(on) tr VDS td(off) tf VGS 90% 10% 0 V – 10 V TYPICAL CHARACTERISTICS Table of Graphs FIGURE Drain current vs Drain-to-source voltage 3 Drain current vs Gate-to-source voltage 4 Static drain-to-source on-state resistance vs Drain current 5 Capacitance vs Drain-to-source voltage 6 Static drain-to-source on-state resistance (normalized) vs Junction temperature 7 Source-to-drain diode current vs Source-to-drain voltage 8 Static drain-to-source on-state resistance vs Gate-to-source voltage 9 Gate-to-source threshold voltage vs Junction temperature 10 Gate-to-source voltage vs Gate charge 11 |
Numéro de pièce similaire - TPS1100PW |
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Description similaire - TPS1100PW |
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