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2SC3709A-Y Fiches technique(PDF) 4 Page - Toshiba Semiconductor |
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2SC3709A-Y Fiches technique(HTML) 4 Page - Toshiba Semiconductor |
4 / 5 page 2SC3709A 2006-11-10 4 (1) Tc = Ta Infinite heat sink (2) No heat sink 50 0 0 40 80 120 160 200 240 10 20 30 40 (1) (2) Collector current IC (A) VBE (sat) – IC Base-emitter voltage VBE (V) IC – VBE Collector-emitter voltage VCE (V) Safe Operating Area Ambient temperature Ta (°C) PC – Ta 1 3 10 30 100 0.1 0.3 0.5 1 30 10 5 3 IC max (pulsed)* 10 ms* VCEO max 1 ms* *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature IC max (continuous) DC operation Tc = 25°C 10 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2 4 6 8 Common emitter VCE = 1 V Tc = 100°C 25 −55 Common emitter IC/IB = 20 Tc = −55°C 25 100 0.1 0.3 1 3 10 0.1 0.3 0.5 1 3 5 20 Pulse width tw (s) rth – tw 0.001 1000 10 100 0.01 0.1 30 0.3 3 1 100 10 1 0.1 Curves should be applied in thermal limited area. (Single nonrepetitive pulse) (1) Infinite heat sink (2) No heat sink (1) (2) |
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