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2SC3709A-Y Fiches technique(PDF) 4 Page - Toshiba Semiconductor

No de pièce 2SC3709A-Y
Description  High-Current Switching Applications
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC3709A-Y Fiches technique(HTML) 4 Page - Toshiba Semiconductor

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2SC3709A
2006-11-10
4
(1) Tc = Ta
Infinite heat sink
(2) No heat sink
50
0
0
40
80
120
160
200
240
10
20
30
40
(1)
(2)
Collector current IC (A)
VBE (sat) – IC
Base-emitter voltage VBE (V)
IC – VBE
Collector-emitter voltage VCE (V)
Safe Operating Area
Ambient temperature Ta (°C)
PC – Ta
1
3
10
30
100
0.1
0.3
0.5
1
30
10
5
3
IC max (pulsed)*
10 ms*
VCEO max
1 ms*
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature
IC max
(continuous)
DC operation
Tc = 25°C
10
0
0
0.4
0.8
1.2
1.6
2.0
2.4
2
4
6
8
Common emitter
VCE = 1 V
Tc = 100°C
25
−55
Common emitter
IC/IB = 20
Tc = −55°C
25
100
0.1
0.3
1
3
10
0.1
0.3
0.5
1
3
5
20
Pulse width tw (s)
rth – tw
0.001
1000
10
100
0.01
0.1
30
0.3
3
1
100
10
1
0.1
Curves should be applied in thermal limited area.
(Single nonrepetitive pulse)
(1) Infinite heat sink
(2) No heat sink
(1)
(2)


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