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2SA1362-GR Fiches technique(PDF) 2 Page - Toshiba Semiconductor

No de pièce 2SA1362-GR
Description  Low Frequency Power Amplifier Applications
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SA1362-GR Fiches technique(HTML) 2 Page - Toshiba Semiconductor

  2SA1362-GR Datasheet HTML 1Page - Toshiba Semiconductor 2SA1362-GR Datasheet HTML 2Page - Toshiba Semiconductor 2SA1362-GR Datasheet HTML 3Page - Toshiba Semiconductor 2SA1362-GR Datasheet HTML 4Page - Toshiba Semiconductor  
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2SA1362
2007-11-01
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = −15 V, IE = 0
−100
nA
Emitter cut-off current
IEBO
VEB = −5 V, IC = 0
−100
nA
Collector-emitter breakdown voltage
V (BR) CEO
IC = −10 mA, IB = 0
−15
V
hFE (1)
(Note)
VCE = −1 V, IC = −100 mA
120
400
DC current gain
hFE (2)
VCE = −1 V, IC = −800 mA
40
Collector-emitter saturation voltage
VCE (sat)
IC = −400 mA, IB = −8 mA
−0.2
V
Base-emitter voltage
VBE
VCE = −1 V, IC = −10 mA
−0.5
−0.8
V
Transition frequency
fT
VCE = −5 V, IC = −10 mA
120
MHz
Collector output capacitance
Cob
VCB = −10 V, IE = 0, f = 1 MHz
13
pF
Note: hFE (1) classification Y (Y): 120~240, GR (G): 200~400
( ) marking symbol


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