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TLP185GB-TPLEO Fiches technique(PDF) 3 Page - Toshiba Semiconductor |
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TLP185GB-TPLEO Fiches technique(HTML) 3 Page - Toshiba Semiconductor |
3 / 11 page TLP185 2012-02-14 3 Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: Pulse width ≤ 100 μs,f=100 Hz Note 3: Device considered a two terminal device: Pins 1 and 3 shorted together and 4 and 6 shorted together. Recommended Operating Conditions (Note) Characteristic Symbol Min. Typ. Max. Unit Supply voltage VCC ― 5 48 V Forward current IF ― 16 20 mA Collector current IC ― 1 10 mA Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Characteristic Symbol Rating Unit Forward current IF 50 mA Forward current derating (Ta ≥ 90°C) ΔIF / °C -1.5 mA / °C Pulse forward current (Note2) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C Collector−emitter voltage VCEO 80 V Emitter−collector voltage VECO 7 V Collector current IC 50 mA Collector power dissipation PC 150 mW Collector power dissipation derating (Ta ≥ 25°C) ΔPC / °C -1.5 mW / °C Junction temperature Tj 125 °C Operating temperature range Topr −55 to 110 °C Storage temperature range Tstg −55 to 125 °C Lead soldering temperature Tsol 260 (10s) °C Total package power dissipation PT 200 mW Total package power dissipation derating (Ta ≥ 25°C) ΔPT / °C -2.0 mW / °C Isolation voltage (AC, 1min., R.H. ≤ 60%) (Note 3) BVS 3750 Vrms |
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