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NZT6729 Fiches technique(PDF) 1 Page - Fairchild Semiconductor

No de pièce NZT6729
Description  PNP General Purpose Amplifier
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

NZT6729 Fiches technique(HTML) 1 Page - Fairchild Semiconductor

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TN6729A
PNP General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 800 mA.
Sourced from Process 79.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
NZT6729
Thermal Characteristics
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
80
V
VCBO
Collector-Base Voltage
80
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current - Continuous
1.0
A
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Symbol
Characteristic
Max
Units
TN6729A
*NZT6729
PD
Total Device Dissipation
Derate above 25
°C
1.0
8.0
1.0
8.0
W
mW/
°C
RθJC
Thermal Resistance, Junction to Case
50
°C/W
RθJA
Thermal Resistance, Junction to Ambient
125
125
°C/W
B
C
C
SOT-223
E
TO-226
C
B
E
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
Discrete POWER & Signal
Technologies
© 1997 Fairchild Semiconductor Corporation


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