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NZT6729 Fiches technique(PDF) 1 Page - Fairchild Semiconductor |
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NZT6729 Fiches technique(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page TN6729A PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 800 mA. Sourced from Process 79. Absolute Maximum Ratings* TA = 25°C unless otherwise noted NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. NZT6729 Thermal Characteristics TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Symbol Parameter Value Units VCEO Collector-Emitter Voltage 80 V VCBO Collector-Base Voltage 80 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 1.0 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Symbol Characteristic Max Units TN6729A *NZT6729 PD Total Device Dissipation Derate above 25 °C 1.0 8.0 1.0 8.0 W mW/ °C RθJC Thermal Resistance, Junction to Case 50 °C/W RθJA Thermal Resistance, Junction to Ambient 125 125 °C/W B C C SOT-223 E TO-226 C B E *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. Discrete POWER & Signal Technologies © 1997 Fairchild Semiconductor Corporation |
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